先前經驗得知壓阻式壓力感測器在風場內進行量測時對於流速的靈敏度大於對風場壓力的靈敏度，使其壓力量測功能等同失效，因此本研究欲開發電容式壓力感測器來進行風場壓力的量測。
本研究主要利用UMC 0.18μm 互補式金氧半微機電製程平台，配合金屬濕蝕刻、超臨界乾燥以及高分子沉積封裝來完成電容式絕對型壓力感測器，量測架構則透過 AD7746 為CVC(Capacitance-to-Voltage Converter)將電容訊號轉換為電壓訊號，使其更好進行量測。
本電容式壓力感測器外型為真空膜盒，使用雙邊可動圓形薄膜當作感測電極，參考接觸式電容式來提升線性度，並設計階梯狀近似斜坡狀的薄膜改變薄膜接觸位置，以及提升輸出靈敏度。

including applications involving flapping-wing aerial vehicles and wind turbines. Prior investigations revealed that piezoresistive pressure sensors exhibit greater sensitivity to flow velocity than to ambient pressure variations within wind fields, thereby compromising their accuracy in pressure measurements. To address this limitation, the present study proposes the development of a capacitive pressure sensor tailored for precise wind field pressure measurement.
The sensor is fabricated using the UMC 0.18 μm CMOS-MEMS process platform, incorporating key post-processing steps such as metal wet etching, supercritical CO₂ drying, and polymer encapsulation. The sensing architecture employs the AD7746 as a Capacitance-to-Voltage Converter (CVC), enabling the conversion of capacitance signals into voltage outputs for enhanced measurement fidelity.
Structurally, the capacitive pressure sensor features a vacuum-sealed diaphragm capsule design with dual movable circular membranes functioning as sensing electrodes. A contact-mode capacitive configuration is adopted to improve linearity. Furthermore, a stepped, slope-like membrane profile is introduced to modulate the contact location and enhance output sensitivity.

第一章 緒論	1
1-1 研究背景	1
1-2 研究動機	2
1-3 論文架構	6
第二章 微機電系統與CMOS MEMS製程介紹	7
2-1 微機電系統介紹	7
2-2 微機電製造技術	8
2-2-1 體型微細加工	8
2-2-2 面型微細加工	10
2-3 UMC 0.18μm CMOS MEMS製程平台	11
第三章 壓力感測器	13
3-1 壓力感測器原理及分類	13
3-1-1壓力感測器原理	13
3-1-2壓阻式壓力感測器	14
3-1-3壓電式壓力感測器	16
3-1-4電容式壓力感測器	18
第四章 元件設計與模擬	22
4-1 感測結構設計	22
4-1-1 電容式壓力感測器感測原理	22
4-1-2 感測薄膜結構設計	24
4-1-3腔體結構設計	27
4-1-4 Metal 7光罩設計	30
4-2 結構分析與模擬	32
第五章 結構佈局與後製程	37
5-1 壓力感測器結構佈局	37
5-2 壓力感測器後製程	42
5-3 薄膜沾黏問題	43
5-4 壓力感測器後製程結果	46
第六章 量測結果與討論	50
6-1 壓力感測器量測	50
6-1-1 壓力感測器量測儀器架構	50
6-1-2 AD7746 evaluation board介紹	53
6-1-3 量測架構雜散電容情況	56
6-1-4 壓力感測器靈敏度量測分析	67
6-2 壓力感測器量測結果與討論	69
參考文獻	71
附錄A 元件各層layout	76
附錄B 各蝕刻情況OM圖	87

圖目錄
圖1-1達文西飛行之書手稿	4
圖1-2壓阻式壓力感測器風洞試驗	5
圖1-3毅力號	5
圖1-4雙邊可動薄膜電容式壓力感測器	6
圖2-1體型微細加工剖面圖	9
圖2-2側向侵蝕剖面圖	10
圖2-3犧牲層示意圖	11
圖2-4 CMOS中MEMS區塊與Circuit區塊	12
圖2-5 Metal7在CMOS諸層之上	12
圖3-1巴登管	13
圖3-2未安裝的電阻箔應變規	14
圖3-3壓阻式壓力感測器	15
圖3-4惠斯登電橋	15
圖3-5左為正壓電效應；右為逆壓電效應	17
圖3-6電容式壓力感測器原理示意圖	18
圖3-7電容式壓力感測器電容-壓力曲線	19
圖3-8接觸式電容壓力感測器	20
圖4-1電容式壓力感測器工作原理	23
圖4-2接觸式壓力感測器	25
圖4-3新型態之接觸式壓力感測器	25
圖4-4近似幾何之接觸式壓力感測器	25
圖4-6感測薄膜組成示意圖	26
圖4-5本研究電容式壓力感測器立體圖及剖面圖	26
圖4-7元件腔體組成	28
圖4-8 Parylene coater	29
圖4-9 Parylene coating	29
圖4-10 Metal 7光罩製程	30
圖4-11蝕刻孔分佈及側切示意圖	31
圖4-12設計參數對照圖	32
圖4-13 COMSOL Multiphysics程式	33
圖4-14接觸對偶功能（Contact Pair）	34
圖4-15 FEM模擬分析圖	35
圖4-16 FEM電容值模擬結果圖	36
圖5-1本研究壓力感測器layout佈局	38
圖5-2感測電極及導線佈局	39
圖5-3 Metal 7佈局	40
圖5-4犧牲層與蝕刻孔關係圖	41
圖5-5後製程流程圖	42
圖5-6  SAMDRI-795	45
圖5-7 CO2三相圖及臨界點	46
圖5-8使用食人魚溶液蝕刻OM圖	47
圖5-9被蝕刻之PAD	48
圖5-10塗抹正光阻烤乾後之PAD	49
圖5-11使用HCl蝕刻後	49
圖6-1量測儀器架設示意圖	50
圖6-2真空腔	51
圖6-3 Agilent E4980A	51
圖6-4 本研究量測新架構	52
圖6-5 AD7746 evaluation board	52
圖6-6 AD7746 evaluation Software	53
圖6-7 AD7746 evaluation board面板	57
圖6-8未連接任何導線之電容量測分析	57
圖6-9 RF電纜組件SMB Plug to SMB Plug RG316 6in	58
圖6-10 SMB Plug與Jack接頭	58
圖6-11連接同軸電纜量測示意圖	59
圖6-12連接同軸電纜之電容量測分析	59
圖6-13 PCB洗板流程	61
圖6-14 AD7746 evaluation board連接PCB	62
圖6-15 AD7746 evaluation board連接PCB電容量測分析	63
圖6-16設計PCB板EasyEDA介面	63
圖6-17 AD7746 evaluation board連接新PCB板	64
圖6-18 AD7746 evaluation board連接新PCB板電容量測分析	65
圖6-19 USB線拉出示意圖	66
圖6-20用於延長測試的USB線	67
圖6-21延長USB訊號線電容量測分析	67
圖6-22量測架構擺放	68
圖6-23完整架構電容量測分析	68
圖6-24量測結果關係圖	69
圖A-1 M1與VIA1	76
圖A-2 VIA1與M2	77
圖A-3 M2與VIA2	78
圖A-4 VIA2與M3	79
圖A-5 M3與VIA3	80
圖A-6 VIA3與M4	81
圖A-7 M4與VIA4	82
圖A-8 VIA4與M5	83
圖A-9 M5與VIA5	84
圖A-10 VIA5與M6	85
圖A-11 PAD	86
圖B-1M1細節蝕刻圖	87
圖B-2 M2細節蝕刻圖	87
圖B-3單一元件局部蝕刻圖	88
圖B-4單一元件局部蝕刻圖	89
圖B-5 M2細節蝕刻圖	89
圖B-6陣列元件蝕刻圖	90
圖B-7單一元件局部蝕刻圖	90
圖B-8單一元件局部蝕刻圖	91
圖B-9單一元件局部蝕刻圖	91
圖B-10單一元件局部蝕刻圖	92
圖B-11陣列元件蝕刻圖	92
圖B-12單一元件局部蝕刻圖	93
圖B-13單一元件局部蝕刻圖	93
圖B-14單一元件局部蝕刻圖	94
圖B-15單一元件局部蝕刻圖	94
 
表目錄
表3-1常用壓電阻材料的計示因子	16
表3-2 MEMS壓力感測器特色表	21
表4-1 UMC 0.18μm CMOS MEMS製程膜層厚度表	27

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