論文提要內容：
藍寶石基板廣泛用於半導體基板中。其主要優勢包括高硬度、高能隙和HCP晶格結構。最重要的是，藍寶石基板價格便宜，晶體純度和晶體製造技術非常成熟。本論文的研究分為三個部分。藍寶石被用作基本基板，對其進行了表面奈米結構處理，並應用於該基板上。
第一部分是藍寶石的基本應用，用於高亮度發光二極體結構的發光效率。我們已經證明，圖案化的藍寶石基板可以有效降低其磊晶的缺陷密度，增强LED的内部量子效率，並提高整體EQE。
第二步是使用藍寶石基板作為具有可控晶格方向的生長基板，以生長二維材料WSe2。借助我們自行開發的雙管晶體薄膜成長系统，可以成功製造出高質量的WSe2薄膜。根據測量，該薄膜具有極低的熱導率，在高熱阻薄膜材料的應用中具有潜力。
第三部分是將圖案化的藍寶石基板用作生物傳感器的基板。在其上鍍上金屬後，發現拉曼增益效果可以達到109。我們在圖案化藍寶石基板和藍寶石基板分別鍍上了銀薄膜，然後進行熱退火。在過程中，我們使用不同的退火時間找到了最佳結果的參數。實驗中的最佳訊號是塗有銀薄膜但未經熱退火的SERS基板。從SERS基板的SEM圖中可以看出，銀顆粒分布在基板表面，銀顆粒之間的共振產生了許多熱點，這些熱點為拉曼訊號提供了強烈的電磁場，從而獲得了增益效果。通過對10-6M的R6G進行計算，增益效應为3.49×109。

Abstract:
Sapphire substrates are widely used in semiconductor processes. Its main advantages are its high hardness, large energy gap, and wurtzite HCP lattice structure. The most important thing is that sapphire substrates are very cheap, and the purification and crystal manufacturing technologies are very mature. The research of this paper is divided into three parts. The sapphire substrate is used as the basic substrate, and the surface nano-micron process is carried out and applied on this substrate.
    The first part is the basic application of sapphire substrate, which is used in the epitaxial process of high-brightness light-emitting diode structures. We have proven that the patterned sapphire substrate can effectively reduce the defect density of its epitaxial layer, enhance the internal quantum efficiency of the LED, and improve the overall EQE.
    The second step is to use a sapphire substrate as a growth substrate with controllable lattice direction to grow the two-dimensional material WSe2. With our self-developed double-tube crystal growth system, high-quality WSe2 films can be successfully grown. According to measurements, the film has extremely low thermal conductivity and has potential in the application of high thermal resistance film materials.
    The third part is to use patterned sapphire substrate as the base material of the biosensor. After metal coating on it, it was found that the Raman gain effect can reach 109. We coated PSS and Sapphire with silver particles and then performed thermal annealing. During the process, we used different annealing times to find the parameters with the best results. The best signal in the experiment was the SERS substrate coated with silver but not thermally annealed. From the SEM image of the SERS substrate, silver particles are distributed on the surface of the substrate, and the resonance between the silver particles generates many hot spots, and these hot spots contribute a strong electromagnetic field to gain a gain effect on the Raman signal. Through 10-6M R6G the calculated gain effect is 3.49×109.

Table of Contents
Acknowledgement	V
Table of Contents	VI
List of Figure	VIII
Chapter 1 Introduction	1
1.1 Research Background	1
1.2 Research Aims	3
1.3 Structure of the thesis	5
Chapter 2 Literature Review	6
2.1 Sapphire Substrate	6
2.2 Patterned Sapphire Substrate (PSS)	8
2.3 Introduction Transition metal dichalcogenide monolayers (TMDCs)	11
2.3.1 Introduction	11
2.3.2 Crystal structure of TMDCs	12
2.3.3 Electrical properties of TMDCs	14
2.3.4 Thermal conductivity of Tungsten diselenid	17
Chapter 3 Experimental Process	23
3.1 Chemicals	23
3.2 Layout of Experiment	24
3.3 Observation and Analysis	27
3.3.1 Scanning Electron Microscope (SEM)	27
3.3.2 Raman Spectroscopy (Raman)	27
3.4 Experimental Procedure	28
Chapter 4 Results and Discussion	29
4.1 Surface roughness	29
Chapter 5 Conclusions	43
Reference	45


































List of Figure
FIGURE 1. (A)TMDCS IS PERIODIC TABLE, IV~VII GROUP TRANSITION METAL IS EASIER TO FORM LAYER STRUCTURE, AND VIII~X REVEAL NON LAYER STRUCTURE NORMALLY. (B)TYPICAL X-M-X STRUCTURE, THE PURPLE ATOM IS TRANSITION METAL, AND YELLOW ATOM IS CHALCOGENIDE. THE SINGLE LAYER STRUCTURE COULD BE A-B-A OR A-B-C PACKING WAY. (C) TMDCS HAVE DIFFERENT STRUCTURE, LIKE 2H, 3R AND 1T, 2H AND 3R IS TRIGONAL PRISMATIC COORDINATION, 1T IS TRIGONAL ANTIPRISMATIC COORDINATION.	13
FIGURE 2. THE ENERGY STATE FOR FILLING ELECTRON TO D ORBITAL FOR IV, V, VI, VII, X GROUP.	15
FIGURE 3. ENERGY BAND GAP STRUCTURE OF WSE2 CHANGE FROM INDIRECT BAND GAP TO DIRECT BAND GAP WITH DIFFERENT NUMBER OF LAYERS	16
FIGURE 4. THERMAL CONDUCTIVITY OF THIN-FILM WSE2 IS LOWER THAN SINGLE CRYSTAL WSE2.	18
FIGURE 5. RHODAMINE 6G STRUCTURAL FORMULA	23
FIGURE 6. ILLUSTRATION OF DEPOSITION PROCESS	25
FIGURE 7. EXPERIMENT LAYOUT AND PARAMETERS	26
FIGURE 8. ZEISS SIGMA 300	27
FIGURE 9. SR500I	28
FIGURE 10. EXPERIMENTAL PROCEDURE	28
FIGURE 11. SEM IMAGES OF PATTERNED SAPPHIRE SUBSTRATE	32
FIGURE 12. SEM IMAGE OF AG ON SAPPHIRE WITHOUT ANNEALING	33
FIGURE 13. SEM IMAGE OF AG ON PSS WITHOUT ANNEALING	34
FIGURE 14. SEM IMAGE OF SAPPHIRE @ 200 ℃, 30 MIN	35
FIGURE 15. SEM IMAGE OF SAPPHIRE @ 200 ℃, 60 MIN	36
FIGURE 16. SEM IMAGE OF SAPPHIRE @ 200 ℃, 90 MIN	37
FIGURE 17. SEM IMAGE OF SAPPHIRE @ 200 ℃, 120 MIN	38
FIGURE 18. SEM IMAGE OF PSS @ 200 ℃, 30 MIN	39
FIGURE 19. SEM IMAGE OF PSS @ 200 ℃, 60 MIN	40
FIGURE 20. SEM IMAGE OF PSS @ 200 ℃, 90 MIN	41
FIGURE 21. SEM IMAGE OF PSS @ 200 ℃, 120 MIN	42
























LIST OF TABLE
TABLE 1. GROWTH OF LARGE WSE2 AND WS2 MONOLAYER CRYSTALS	19

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