§ Browsing ETD Metadata
  
System No. U0002-2208201313191400
Title (in Chinese) LED多晶模組熱性能量測分析
Title (in English) Thermal Performance Study in Multi-Chip Light Emitting Diode
Other Title
Institution 淡江大學
Department (in Chinese) 機械與機電工程學系碩士班
Department (in English) Department of Mechanical and Electro-Mechanical Engineering
Other Division
Other Division Name
Other Department/Institution
Academic Year 101
Semester 2
PublicationYear 102
Author's name (in Chinese) 林冠閔
Author's name(in English) Kuan-Min Lin
Student ID 600370778
Degree 碩士
Language Traditional Chinese
Other Language
Date of Oral Defense 2013-07-11
Pagination 49page
Committee Member advisor - Shung-Wen Kang
co-chair - 王建評
co-chair - 蔡孟昌
Keyword (inChinese) 發光二極體
熱阻
結點溫度
溫度敏感係數
Keyword (in English) LED
Thermal Resistance
Junction Temperature
TSP
Other Keywords
Subject
Abstract (in Chinese)
發光二極體(Lighting Emitting Diode; LED)具有耗電量小、使用壽命長、更加環保、顏色豐富以及高亮度之優勢,在近年來有逐步取代傳統光源之趨勢,並廣泛應用在發光面板上,但是其仍然有散熱方面的問題,為此,探討LED之散熱研究為目前最重要的課題之一。本實驗使用T3Ster熱性能量測系統,建立LED溫度敏感係數(Temperature Sensitive Parameter; TSP)曲線並使用其後處理程式T3SterMaster做結構方程式轉換得知LED構裝之熱阻比熱容圖,介而推估每一層熱阻大小。
本論文使用元件大小為1.4cm×1.4cm,厚度0.2cm,單顆晶粒大小為0.12cm×0.12cm×0.015cm,欲研究探討LED多晶模組(2 Chips LED與4 Chips LED)分別以操作電流100mA、350mA、500mA、700mA在不同間隔距離(0.25cm、0.45cm、0.74cm、1.02cm)以及晶粒串並聯方式之情況下,其之熱性能表現。
其結果顯示,串並聯之連接在2 Chips LED與4 Chips LED實驗中,其接點溫度間只有些微的差異;而在操作電流越大時,熱阻也相對越大,但是隨著晶粒間距離的增加,熱阻則不完全會隨之減少;考量LED多晶模組之熱性能優化時需要考量到晶粒間的距離以及模組幾何尺寸的相互影響。
Abstract (in English)
Lighting Emitting Diode (LED), which has various advantages, such as less power consumption, long lifespan, green environment, variegated colors, high brightness. In these days LED not only has replaced traditional light sources step by step but also has widespread used at lighting plates. But it also has some weakness like heat dissipation. Therefore, thermal management of LEDs modules is one of the most important issues. In this study, using T3Ster measurement system, Temperature Sensitive Parameter (TSP) curves of the LEDs modules were attained then transform transient data to cumulative structure function graphics by the T3SterMaster software.
A series of 2 chips LED and 4 chips LED with 0.25cm, 0.45cm, 0.74cm, 1.02cm four different distances have been packaged in an 1.4cm x 1.4cm x 0.2cm aluminum plate and tested their thermal resistance. The dimension of the single In-GaN blue LED chip is 0.12cm x 0.12cm x 0.015cm. To investigate influence of the electricity on the LEDs modules, tests were conducted under parallel and series circuit respectively, with 100mA, 350mA, 500mA, and 700mA four different control currents.
It was shown that a slight variation of junction temperature between parallel and series circuit tests. Increasing the control current will increase the thermal resistance of LEDs modules. In addition to chip distance, result also showed that size of aluminum plate and boundary condition might have consequences for thermal resistance.
Other Abstract
Table of Content (with Page Number)
誌謝	I
中文摘要	III
英文摘要	IV
目錄	VI
圖目錄	VIII
表目錄	XI
符號表	XII
第一章 緒論	1
1.1 研究背景與動機	1
1.2 文獻回顧	1
第二章 實驗原理	6
2.1 LED簡介	6
2.2 熱傳遞原理	6
2.2.1 熱傳導	7
2.2.2 熱對流	7
2.3 熱阻定義	8
2.3.1 半導體熱阻定義	8
2.4 量測原理	9
2.4.1 溫度敏感係數曲線	10
第三章 實驗設備與方法	11
3.1 實驗設備	11
3.1.1 T3Ster	13
3.1.2 Power Booster及Thermostat系統	14
3.1.3 電源供應器	14
3.1.4 紅外線量測系統	15
3.2 實驗模型	15
3.3 實驗方法與步驟	22
3.3.1 可控制變因	23
3.3.2 實驗步驟與數據處理	24
第四章 實驗結果與討論	35
4.1 串並聯探討	35
4.2 熱性能表現探討	39
4.3 多晶模組熱阻預測探討	44
第五章 總結與未來展望	46
5.1 總結	46
5.2 未來展望	47
參考文獻	48

圖 1 各層間尺寸參數[6]	2
圖 2 因子反應影響圖[6]	3
圖 3 LED於不同環境溫度下壽命與光輸出[7]	4
圖 4 LED溫度與其壽命影響[7]	4
圖 5 實驗設備	12
圖 6 可控溫平台	12
圖 7 紅外線熱像儀	15
圖 8 模組尺寸圖	16
圖 9 待測LED模組	17
圖 10 距離1-1(2 Chips LED)	18
圖 11 距離2-2(2 Chips LED)	18
圖 12 距離3-3(2 Chips LED)	19
圖 13 距離4-4(2 Chips LED)	19
圖 14 距離1-1(4 Chips LED)	20
圖 15 距離2-2(4 Chips LED)	20
圖 16 距離3-3(4 Chips LED)	21
圖 17 距離4-4(4 Chips LED)	21
圖 18 LED結構之熱阻-熱容圖	23
圖 19 量測之TSP曲線圖	25
圖 20 程式T3Ster Booster Plug-in Setup	26
圖 21 T3SterMaster之Sensitivity輸入圖	27
圖 22 實驗之Delay Time和Time Limit測試圖	27
圖 23 結構方程式微分圖	29
圖 24 結構方程式微分斜率趨近於無限大示意圖	29
圖 25 結構方程式分界圖	30
圖 26 本文之LED熱阻結構分布圖	31
圖 27 區隔鋁基板熱阻以及接觸空隙之熱阻之依據	31
圖 28 T3Ster暫態熱阻取得之原理(1)	32
圖 29 T3Ster暫態熱阻取得之原理(2)	33
圖 30 紅外線熱像儀校正圖	34
圖 31 2 Chips LED在不同電流、距離、連接下的結點溫度表現	35
圖 32 4 Chips LED在不同電流、距離、連接下的結點溫度表現	37
圖 33 2 Chips LED在不同操作電流及距離下的熱阻表現	39
圖 34 2 Chips LED在不同操作電流及距離下的結點溫度表現	40
圖 35 2 Chips LED結點溫度與紅外線比較圖	40
圖 36 4 Chips LED在不同操作電流及距離下的熱阻表現	41
圖 37 4 Chips LED在不同操作電流及距離下的結點溫度表現	42
圖 38 4 Chips LED結點溫度與紅外線比較圖	42
圖 39 4 Chips紅外線熱影像圖	43
圖 40 不同電流下之多晶LED模組預測趨勢圖	45
圖 41 700mA多晶LED模組預測趨勢圖	45

表1 2 Chips LED之Tj相對誤差百分比	36
表2 4 Chips LED之Tj相對誤差百分比	38
References
[1]	James Petroski, “Thermal Challenges Facing New Generation Light Emitting Diodes (LED) for Lighting Applications”, Solid State Light II, Proc. of SPIE, Vol. 4776, pp. 215-222. 2002.
[2]	Frank Wall, Paul S. Martin, Gerard Harbers” High Power LED Package Requirements”, Third International Conference on Solid State Lighting, Proc. of SPIE, Vol. 5187, pp.85-92, 2004
[3]	OIDA, “Light Emitting Diodes (LEDs) for General Illumination”, An OIDA Technology Roadmap Update 2002
[4]	Park, J., Shin, M., Lee, C. C., “Measurement if temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser,” Optics Letters, Vol. 29, No. 22, p1656-2658. 2004.
[5]	Hwang, W. J., Lee, T. H., Kim, L., and Shin, M. W., “Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement,” phys. Stat. sol. (c) 1, No. 10,2429-2432. 2004.
[6]	James Petroski, “Spacing of High-Brightness LEDs on Metal Substrate PCB's for Proper Thermal Performance” Inter-Society Conference on Thermal Phenomena, IEEE, pp. 507-514. 2004.
[7]	Nadarajah Narendran and Yimin Gu, ”Life of LED-Based White Light Sources”, Journal of Display Technology, IEEE/OSA, Vol. 1, No. 1, 2005
[8]	王焜雄, LED構裝溫度量測與熱傳分析, 清華大學動力機械工程學系, 碩士論文, 2008
[9]	曾俊瑜, LED發光二極體暫態熱阻量測分析, 淡江大學機械與機電工程學系, 碩士論文, 2012
[10]	F. Kreith, and M.S. Bohn, “Principles of Heat Transfer”, 6th Edition, Brooks/Cole, Pacific Grove, California, 2001。
[11]	EIA/JEDEC Standard, “Integrated Circuits Thermal Measurement Method-Electrical Test Method (Single Semiconductor Device),” EIA/JESD51-1,1995.
[12]	EIA/JEDEC Standard, “Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path,” EIA/JESD51-14,2010.
[13]	T3Ster, Thermal Transient Tester Technical Information
Terms of Use
Within Campus
I request to embargo my thesis/dissertation for 2 year(s) right after the date I submit my Authorization Approval Form.
Duration for delaying release from 2 years.
Outside the Campus
I grant the authorization for the public to view/print my electronic full text with royalty fee and I donate the fee to my school library as a development fund.
Duration for delaying release from 2 years.
 Top

If you have any questions, please contact us!

Library: please call (02)2621-5656 ext. 2487 or email