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System No. U0002-0503202002103900
Title (in Chinese) 機械化學研磨單晶碳化矽之砂輪開發
Title (in English) Development of Grinding Wheel for Mechanical Chemical Grinding of Single Crystal Silicon Carbide
Other Title
Institution 淡江大學
Department (in Chinese) 機械與機電工程學系碩士班
Department (in English) Department of Mechanical and Electro-Mechanical Engineering
Other Division
Other Division Name
Other Department/Institution
Academic Year 108
Semester 1
PublicationYear 109
Author's name (in Chinese) 郭柏漢
Author's name(in English) Po-Han Kuo
Student ID 607370128
Degree 碩士
Language Traditional Chinese
Other Language
Date of Oral Defense 2020-01-08
Pagination 85page
Committee Member advisor - Choung-Lii Chao
co-chair - 謝榮哲
co-chair - 何嘉哲
Keyword (inChinese) 單晶碳化矽
磨削加工
機械化學磨削
表面粗糙度
Keyword (in English) Single Crystal Silicon Carbide
Grinding
MCG
Surface roughness
Other Keywords
Subject
Abstract (in Chinese)
隨著科技的發展,高科技產品日新月異且要求越來越高,半導體朝著高功率、高頻率、低能源損耗的趨勢發展。而與使用傳統的單晶矽相比,單晶碳化矽可以減少大部分損失的能量,在效能上比目前所使用的單晶矽相比表現更佳,有望成為下一代半導體材料。但其為硬脆材料因此加工困難,表面光潔度及損傷層之問題仍需克服。本研究使用作為化學磨料的氧化鈰(CeO2)與機械磨料的鑽石以不同配比製作成之砂輪,以機械化學磨削(MCG)的方式對單晶4H-SiC進行加工。加工參數分為不同進刀量、乾溼式加工進行研究。最終在乾式加工下能得到表面粗糙度2.4nm(Ra)的碳化矽表面。
Abstract (in English)
With the development of science and technology, high-tech products are changing with each passing day and the requirements are getting higher and higher, and semiconductors are developing towards the trend of high power, high frequency, and low energy loss. Compared with the use of traditional single crystal silicon, single crystal silicon carbide can reduce most of the lost energy, and has better performance than the currently used single crystal silicon, which is expected to become the next generation of semiconductor materials. However, it is a hard and brittle material, so it is difficult to process, and the problems of surface finish and damaged layer still need to be overcome. In this study, single crystal 4H-SiC was processed by mechanical chemical grinding (MCG) using grinding wheels made of cerium oxide (CeO2) as a chemical abrasive and diamonds made of mechanical abrasive at different ratios. The processing parameters were studied with different feed amounts, dry and wet processing,. Finally, a silicon carbide surface with a surface roughness of 2.4 nm (Ra) can be obtained under dry processing.
Other Abstract
Table of Content (with Page Number)
目錄
致謝	I
中文摘要	III
英文摘要	IV
目錄	V
圖目錄	VIII
表目錄	XII
第一章、緒論	1
1-1 前言	1
1-2 研究動機	2
1-3 研究目的	3
第二章、文獻回顧及理論基礎	4
2-1 單晶碳化性質介紹	4
2-2 精密磨削加工	7
2-2-1 砂輪組成	7
2-2-1-1磨料種類	7
2-2-1-2結合劑種類	8
2-2-1 3砂輪磨耗	10
2-2-1-4 砂輪修整與削銳	11
2-2-2 磨削加工機制	12
2-2-3 硬脆材料移除機制	13
2-2-4 磨削加工參數之影響	14
2-3化學機械磨削	15
2-3-1 單晶碳化矽磨削磨料探討	15
2-3-2 機械化學磨削	17
2-3-3 機械化學砂輪製作專利	20
第三章、實驗方法及設備	22
3-1研究流程圖	22
3-2 研究設計	23
3-3 實驗設備	25
3-3-1 製作砂輪設備	25
3-3-2 實驗加工設備	30
3-3-3 量測分析儀器	33
3-4 實驗步驟	38
3-4-1砂輪製作	38
3-4-2磨削實驗	40
第四章、結果與討論	44
4-1 Pin on Disc砂輪磨削單晶碳化矽之結果	44
4-2 棒狀砂輪磨削單晶碳化矽之結果	49
4-2-1 C100 1:1砂輪磨削單晶碳化矽之結果	51
4-2-2 C100 3:1砂輪磨削單晶碳化矽之結果	53
4-2-3 C180 3:1砂輪磨削單晶碳化矽之結果	55
4-2-4 三種砂輪實驗結果之比較	56
4-3 平面磨削單晶碳化矽之結果	58
4-3-1陶瓷結合劑之砂輪磨削單晶碳化矽	59
4-3-2樹酯結合劑之砂輪磨削單晶碳化矽	61
4-3-2-1 C100 1:1砂輪平面磨削結果	62
4-3-2-2 C100 3:1砂輪平面磨削結果	67
4-3-2-3 C180 3:1砂輪平面磨削結果	70
4-3-3 磨削實驗結果之分析	73
4-3-4 奈米鑽石精加工磨削結果	76
第五章、結論	78
參考文獻	80
 
圖目錄
圖2 1 SiC單晶碳化矽晶體結構【3】	4
圖2 2 SiC晶體排列示意圖(3C 2H 4H 6H)【3】	4
圖2 3 4H-SiC和6H-SiC的晶體結構【5】	5
圖2 4砂輪磨耗型態(a)磨料磨耗(b)磨料破碎(c)結合劑破碎【11】	10
圖2 5砂輪磨粒脫落階段過程【12】	11
圖2 6砂輪削銳過程【12】	12
圖2 7摩擦、犁切與切削三階段【13】	13
圖2 8 CMG與Si晶圓產生之化學反應【29】	19
圖3 1研究流程圖	22
圖3 2單晶碳化矽之方向判別【38】	23
圖3 3氧化鈰磨料(2~5 μm)	25
圖3 4鑽石磨料(3~6nm)	25
圖3 5碳酸鈉	26
圖3 6 939p酚醛樹脂	26
圖3 7 551DU40	27
圖3 8 VC陶瓷結合劑	27
圖3 9 B-1樹酯粉	27
圖3 10 PMMA發泡劑	28
圖3 11 105M濕潤劑	28
圖3 12棒狀砂輪之模具圖	28
圖3 13砂輪齒條模具圖	28
圖3 14練太郎脫泡攪拌機	29
圖3 15氟素離型劑	29
圖3 16真空熱壓成型機	29
圖3 17高溫電爐	30
圖3 18 NACHi ASP-MKE精密加工機【39】	31
圖3 19 EQUIP TOP1224CNC精密加工機【40】	31
圖3 20 EQUIP TOP1224CNC精密加工機 內部	31
圖3 21 4H-SiC單晶碳化矽	33
圖3 22 OLYMPUS-BX51M光學金相顯微鏡	34
圖3 23 OLYPUS 4100共軛焦顯微鏡【41】	35
圖3 24 FlexSEM 1000可變真空掃描式電子顯微鏡【42】	37
圖3 25 Pin on Disc加工示意	41
圖3 26 CCD鏡頭	41
圖3 27棒狀砂輪加工示意圖	42
圖3-28棒狀砂輪加工示意圖	42
圖3 29平面磨削加工示意圖	42
圖3 30平面磨削加工示意圖(a)乾式磨削(b)濕式磨削	43
圖3 31試片及砂輪磨削後示意圖	43
圖4 1 Pin on Disc之圓棒砂條	45
圖4 2 Pin on Disc磨削實驗之架構圖	46
圖4 3 Pin on Disc加工後之單晶碳化矽	46
圖4 4單晶碳化矽試片磨削之截面積	48
圖4 5 Pin on Disc磨削材料移除量之比較	49
圖4 6 Pin on Disc磨削比之比較	49
圖4 7棒狀砂輪燒結後之形貌	50
圖4 8棒狀砂輪加工後之單晶碳化矽	51
圖4 9 C100 1:1砂輪磨削痕跡(光學顯微鏡觀測)	52
圖4 10 C100 1:1砂輪磨削痕跡(雷射共軛焦顯微鏡量測)	52
圖4 11 C100 1:1單晶碳化矽加工溝槽圖(使用Form Talysurf量測)	52
圖4 12 C100 3:1砂輪乾式磨削痕跡(光學顯微鏡觀測)	53
圖4 13 C100 3:1砂輪乾式磨削痕跡(雷射共軛焦顯微鏡量測)	54
圖4 14 C 100 3:1單晶碳化矽加工溝槽圖(使用Form Talysurf量測)	54
圖4 15 C180 3:1砂輪乾式磨削痕跡(光學顯微鏡觀測)	55
圖4 16 C180 3:1砂輪乾式磨削痕跡(雷射共軛焦顯微鏡量測)	55
圖4 17 C180 3:1單晶碳化矽加工溝槽圖(使用Form Talysurf量測)	56
圖4 18棒狀砂輪研磨單晶碳化矽之表面粗糙度	57
圖4 19棒狀砂輪之磨削比	58
圖4 20 1A1砂輪完成圖	58
圖4 21 1A1砂輪平面磨削單晶碳化矽加工後之試片	61
圖4 22 1A1砂輪乾式及溼式磨削痕跡	62
圖4 23砂輪平面磨削示意圖	62
圖4 24 C100 1:1砂輪表面形貌	64
圖4 25磨削前砂條表面之元素分析	65
圖4 26乾式磨削後砂條表面之元素分析	66
圖4 27加工後單晶碳化矽表面之元素分析	67
圖4 28 C100 3:1砂輪表面形貌	69
圖4 29 C180 3:1砂輪表面形貌	72
圖4 30相同集中度不同磨料配比之比較(乾磨)	74
圖4 31相同磨料配比不同集中度之比較(乾磨)	74
圖4 32 C180 3:1有無添加碳酸鈉之比較	75
圖4 33精密平面加工示意圖	76
 
表目錄
表2 1半導體材料之特性比較表【6】	6
表2 2單晶矽與單晶碳化矽機械性質【7】	6
表2 3磨料之種類及特性【9】	8
表2 4結合劑之種類及特性【10】	9
表3 1 MCG砂輪組成	24
表3 2鑽石粉末規格表	25
表3 3 939p酚醛樹脂性質表	26
表3 4 551DU40性質表	27
表3 5 NACHi ASP-MKE精密加工機規格表【38】	30
表3 6 EQUIP TOP1224CNC精密加工機規格表【40】	32
表3 7單晶碳化矽(4H)材料性質	33
表3 8 OLYPUS 4100規格表【41】	36
表3 9 FlexSEM 1000規格表【42】	38
表4 1 Pin on Disc砂輪之配比	45
表4 2 Pin on Disc加工參數	46
表4 3 Pin on Disc磨削單晶碳化矽後之表面	47
表4 4 Pin on Disc磨削移除量及移除率之比較	48
表4 5棒狀砂輪之成分配比	50
表4 6棒狀砂輪加工參數	50
表4 7 C100 1:1砂輪乾式及濕式加工磨耗	53
表4 8 C100 1:1砂輪乾式及濕式加工單晶碳化矽之表面粗糙度	53
表4 9 C100 3:1砂輪乾式及濕式加工磨耗	54
表4 10 C100 3:1砂輪乾式及濕式加工單晶碳化矽之表面粗糙度	54
表4 11 C180 3:1砂輪乾式及濕式加工磨耗	56
表4 12 C 180 3:1砂輪乾式及濕式加工單晶碳化矽之表面粗糙度	56
表4 13棒狀砂輪乾式加工比較	57
表4 14棒狀砂輪濕式加工比較	57
表4 15 1A1砂輪之配方	59
表4 16陶瓷法實驗加工參數	60
表4 17陶瓷法砂輪磨削單晶碳化矽之結果	60
表4 18樹酯法實驗加工參數	61
表4 19 C100 1:1砂輪磨削單晶碳化矽	63
表4 20 C100 1:1之砂輪磨削結果(表面粗糙度)(nm)	63
表4 21 C100 3:1砂輪磨削單晶碳化矽	68
表4 22 C100 3:1之砂輪磨削結果(表面粗糙度)(nm)	68
表4 23 C180 3:1砂輪磨削單晶碳化矽	71
表4 24 C180 3:1之砂輪磨削結果(表面粗糙度)(nm)	71
表4 25 1A1砂輪平面磨削實驗結果整理	73
表4 26 C180 3:1砂輪(添加碳酸鈉)磨削單晶碳化矽	75
表4 27 精加工磨削結果	77
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