本論文的工作是利用X光吸收光譜近邊緣結構研究一系列摻雜Sb及Se的Bi2Te3粉末，以探討其摻雜與熱電性質量測的關係。從熱電性質量測結果看到，在摻雜Sb的系列中，改變其摻雜濃度會出現不同型式的傳輸載子。經由X光吸收譜近邊緣結構中我們看到摻雜Sb系列的樣品在不同傳輸載子型式下的載子數量皆為增加，而在摻雜Se系列樣品中載子數量卻為減少。此外我們將吸收譜與電阻率量測的結果比對後，發現Sb摻雜使電阻率隨載子濃度的增加而增加，而Se摻雜使電阻率隨著載子濃度減少而增加，得到了不論在Bi-site或Te-Site上的摻雜都會使得載子移動率減少以致於電阻率增加的結果。

In order to study the correlation between doping effect and the thermoelectric property, we have performed x-ray absorption near-edge structure (XANES) study on a series of thermoelectric materials of Bi2-xSbxTe3(x=0,0.5, 1.0 and 1.5) and Bi2Te2.7Se0.3 powders. In the Sb-doped systems, according to the result of the thermopower measurement we found different types of carrier appeared when doping different concentration of Sb. The XANES spectra show that in both p-type and n-type samples, carriers are increased in Sb-doped systems, and decreased in Se-doped systems. After comparing the result of XANES and resistivity measurement, it shows that the resistivity is positively related to the concentration of the carriers when doping Sb; however, the resistivity is negatively related to the concentration of the carriers when doping Se. As a result, any substitution in either Bi-site or Te-site will likely have negative effects on the carrier mobilities.

目錄
第一章  緒論…………………………………………………………...1
    1.1 熱電性質相關理論簡介………………………………………3
    1.2 熱電材料背景介紹……………………………………………6
    1.3 Bi2Te3的相關特性與晶體結構……………………………….8
第二章  研究方法簡介……………………...…………………...……11
2.1 X光吸收光譜近邊緣結構(XANES)………………………....16
2.2 延伸X光吸收光譜精細結構(EXAFS)……………………....16
2.3 數據分析……………………………………………………...19
2.4 實驗方法…………………………………………………...…25
2.5 樣品的處理與準備…………………………………………...32
第三章  實驗結果與討論…………………………………….……….34
    3.1 熱電性質量測結果…………………………………………...34
    3.2摻雜Sb系列XANES光譜圖………………………………..38
3.3摻雜Se系列XANES光譜圖…………………………….….49
第四章  結論………..…………………………….…….......................54
參考文獻…………………………………….…………………….……55

圖表目錄
圖1.1 各種材料其溫度對Z值的表現………………………..…….….7圖1.2 Bi2Te3的菱方晶格及六角晶格的單位晶格結構…...…..………10圖2.1 物質吸收截面與能量之關係圖…………….…………………..12圖2.2 XANES與EXAFS分界圖………………………………….…..15圖2.3 光電子平均自由路徑與能量關係圖……………………...……17圖2.4 單一散射與多重散射之圖示…………………………...………18圖2.5 選擇能量底限E0值的不同方法………………………………..20圖2.6 X光吸收光譜之數據分析流程…………………………….…..24圖2.7 X光吸收光譜實驗示意圖……………………………..……….26圖2.8 穿透式……………………………………………………….…..27圖2.9 X光通過物質之強度衰減……………………………..………..28圖2.10 螢光式…………………………………………………...……..29圖2.11 電子逸出式……………………………………………...……..30圖2.12 光子吸收過程…………………………………………...……..31
圖3.1 Bi2-xSbxTe3系列粉末熱電功率對溫度量測.................................36
圖3.2 Bi2-xSbxTe3系列粉末電阻率對溫度量測圖.................................36
圖3.4 摻雜Se系列粉末熱電功率對溫度量測圖.................................37
圖3.4 摻雜Se系列粉末電阻率對溫度量測圖.....................................37
圖3.5 Bi2-xSbxTe3系列粉末Sb K-edge近邊緣吸收光譜圖...................39
圖3.6 將Sb K-edge背景以一高斯曲線擬合示意圖............................40
圖3.7 Sb 5p空軌域隨Sb摻雜變化的關係圖........................................40
圖3.8 Bi2-xSbxTe3系列粉末Bi L3-edge近邊緣吸收光譜圖..................43
圖3.9 Bi L3-edge近邊緣吸收光譜主峰(a)處放大圖.............................44
圖3.10 將Bi L3-edge背景以一高斯曲線擬合示意圖..........................45
圖3.11 Bi 6d空軌域隨Sb摻雜變化的關係圖......................................45
圖3.12 Bi2-xSbxTe3系列粉末Te L3-edge近邊緣吸收光譜圖...............48
圖3.13 Bi2Te3及Bi2Te2.7Se0.3粉末Te K-edge近邊緣歸一化吸收光譜圖..............................................................................................................51
圖3.14 Bi2Te3及Bi2Te2.7Se0.3粉末Te L3-edge近邊緣歸一化吸收光譜圖..............................................................................................................52
圖3.15 Bi2Te3及Bi2Te2.7Se0.3粉末Bi L3-edge近邊緣歸一化吸收光譜圖..............................................................................................................53

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