在全球能源越來越缺乏的環境下，環保意識的抬頭，隨著綠色能源與節約能源備受重視，世界興起一股綠色能源風暴。因此，具有耗電量小、使用壽命長、環保、顏色豐富、高亮度的發光二極體(Lighting Emitting Diode; LED)在近年來有逐步取代傳統光源的趨勢，為此，LED之散熱構裝影響更為重要，需要更深入的探討。
本論文旨在使用T3Ster系統做測暫態熱阻量測與分析，元件大小為1.4cm×1.4cm，厚度為0.2cm，晶粒大小為0.12cm×0.12cm，因T3Ster在量測二極體之特性有其獨特優點，包括量測時間快速、準確、並能於量測開始1微秒即開始紀錄資料，之後建立LED溫度敏感參數(Temperature Sensitive Parameter；TSP)曲線並使用其後處理程式T3Ster
Master做結構方程式的轉換，得知LED構裝之熱容比熱阻圖，介而推估每一層熱阻大小，並分析其在不同晶粒間距以及不同操作電流下熱阻的趨勢分布。
最後，本文藉由改變操作電流大小、晶粒數量、晶粒距離、以及電流方式來比較其中熱阻大小之影響，並得知晶粒不可太靠近散熱基板邊緣，反而會造成散熱面積不足而影響整體熱阻。

From the environment of decreasing energy, energy saving has become more and more important issue. LED (Lighting Emitting Diode), which has various advantages, such as less power consumption, long lifespan, environmentally friendly, variegated colors and high brightness has replace traditional light sources step by step. Thus, heat dissipation of LED package is the top issue, and need to do more in-depth discussion.

This study presents a methodology for investigating the heat dissipation of the LED package. Using T3Ster measurement system to get the thermal resistance data. The aluminum plate dimension of  device in this study is 1.4cm x 1.4cm x 0.2cm and the LED chip dimension of device is 0.12cm x 0.12cm, due to T3Ster has many unique advantages in measuring diode the characteristics, including accuracy, measure time is fast and can start measuring in 1 microsecond. Then get the LED package TSP (Temperature Sensitive Parameter) curve and Rth-Cth graphic from the T3SterMaster software to evaluate every part of package's thermal resistance. According to the data that we get and analysis Rth trends distribution in different chip distance and working power.

Finally, in this study, we analysis the value of Rth by change of current value, number of LED chip, chip to chip distance and current mode to compare the different. Knowing that chip can't be too close to the edge of the heat dissipation substrate otherwise will lead to affect total Rth cause the insufficient cooling area.

中文摘要	I
英文摘要	II
目錄	IV
圖目錄	VI
表目錄	IX
第一章	緒論	1
1.1 研究背景	1
1.2 研究動機	2
1.3 文獻回顧	2
第二章 實驗原理與分析方法	5
2.1 LED發光原理	5
2.2 傳統LED	6
2.3 LED種類	7
2.3.1 藍光LED	7
2.3.2 白光LED	7
2.4 LED熱傳路徑	9
2.4.1 熱對流	10
2.4.2 熱傳導	10
2.5 熱阻定義	11
2.5.1 半導體熱阻定義	11
2.6 量測原理與分析方法	12
2.6.1 量測原理	12
2.6.2 TSP曲線量測	14
第三章 實驗設備與方法	15
3.1 實驗設備	15
3.2 實驗模型	17
3.3 實驗方法	17
3.3.1 可控制變因	17
3.3.2 實驗步驟與數據取得方式	18
第四章	21
4.1不同晶粒顆數以及晶粒距離之TSP結果分析	21
4.2相同晶粒間距下改變操作電流與其熱阻之關係	21
4.3相同操作電流下改變晶粒間距與其熱阻之關係	22
4.4晶粒數量2顆以及4顆的熱阻差異性	23
4.5熱阻取得之誤差分析	23
第五章 結論與未來展望	24
參考文獻	25
附錄	26

參考文獻
[1] James Petroski, “Thermal Challenges Facing New Generation Light Emitting Diodes (LED) for Lighting Applications”,  Solid State Light II, Proc. of SPIE, Vol. 4776, pp. 215-222. 2002.
[2] Kuckmann, O., “High power LED arrays special requirements on packaging technology,” in Proc. of SPIE The Int. Soc. For Optical Engineering, Vol. 6134, pp. 6113404(1)-613404(8), 2006.
[3] Park, J., Shin, M., Lee, C. C., “Measurement if temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser,” Optics Letters, Vol. 29, No. 22, p1656-2658. 2004.
[4] Hwang, W. J., Lee, T. H., Kim, L., and Shin, M. W., “Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement,” phys. Stat. sol. (c) 1, No. 10,2429-2432. 2004.
[5] Lalith Jayasinghe, Yimin Gu, and Nadarajah Narendran, 
“Characterization of Thermal Resistance Coefficient of High-power LEDs,” Sixth International Conference on Solid State Lighting, Proceedings of SPIE 6337,63370V. 2005.	
[6] James Petroski, “Spacing of High-Brightness LEDs on Metal Substrate PCB's for Proper Thermal Performance,” Inter-Society Conference on Thermal Phenomena, IEEE, pp. 507-514. 2004.
[7]王焜雄, LED構裝溫度量測與熱傳分析, 清華大學動力機械工程
學系,碩士論文,2008
[8] EIA/JEDEC Standard, “Integrated Circuits Thermal Measurement Method-Electrical Test Method (Single Semiconductor Device),” EIA/JESD51-1,1995.
[9] EIA/JEDEC Standard, “Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path,” EIA/JESD51-14,2010.
[10]T3Ster, Thermal Transient Tester Technical Information