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系統識別號 U0002-2802201717525200
DOI 10.6846/TKU.2017.00991
論文名稱(中文) 可能為二維電荷密度波材料之單晶Sr3Ir4Sn13樣品的電子與原子結構
論文名稱(英文) Electronic and atomic structures of Sr3Ir4Sn13 single crystal: A possible 2D-Charge Density Wave material
第三語言論文名稱
校院名稱 淡江大學
系所名稱(中文) 物理學系碩士班
系所名稱(英文) Department of Physics
外國學位學校名稱
外國學位學院名稱
外國學位研究所名稱
學年度 105
學期 1
出版年 106
研究生(中文) 吳政哲
研究生(英文) Cheng-Che Wu
學號 603210120
學位類別 碩士
語言別 繁體中文
第二語言別
口試日期 2017-01-13
論文頁數 63頁
口試委員 指導教授 - 彭維鋒
委員 - 杜昭宏
委員 - 邱昭文
關鍵字(中) 電荷密度波
X光吸收近邊緣結構
延伸X光吸收精細結構
關鍵字(英) CDW
XANES
EXAFS
第三語言關鍵字
學科別分類
中文摘要
本論文主要藉由同步輻射相關實驗研究三元複合錫化物Sr3Ir4Sn13中二維電荷密度波(two-dimensional charge density wave、2D-CDW)。實驗技術上包括X光散射(X-ray Scattering、XRS)、X光吸收近邊緣結構(X-ray absorption near-edge structures、XANES)、延伸X光吸收精細結構(Extended X-ray absorption fine structure、EXAFS),探討高品質的 Sr3Ir4Sn13單晶樣品於相變溫度147K (T* ≈ 147 K) 時的電子與原子結構。
X光散射實驗中,在相變溫度下一系列衛星峰的發現,說明可能在沿著(1 1 0)平面上產生了2D-CDW。相變溫度下當沿著(1 1 0)平面,在EXAFS以及相衍生分析中,發現兩種不同的鍵結長度(Sn1(2)-Sn2),證實了Sn原子的扭曲只發生在(1 1 0)平面上,與2D-CDW有強烈的相關性;而在XANES實驗中,Ir 5d軌域未佔據態的增加以及未佔據態幾乎沒有改變的Sn 5p軌域,說明了在電阻率的變化上,Ir 5d軌域未佔據態的改變相較於Sn 5p軌域扮演較重要的角色。因此在 Sr3Ir4Sn13樣品中,電子以及原子結構與2D-CDW有著密切的關係。
英文摘要
X-ray scattering (XRS), x-ray absorption near-edge structures (XANES) and extended x-ray absorption fine structure (EXAFS) spectroscopic techniques were used to study the electronic and atomic structures of high-quality Sr3Ir4Sn13 (SIS) single crystal both below and above transition temperature (T* ≈ 147 K).
     The evolution of a series of modulated satellite peaks below the transition temperature in XRS experiment indicated the formation of a possible two-dimensional charge density wave (2D-CDW) in the (110) plane. EXAFS phase derivative analysis supports the CDW-like formation by revealing the different bond distances [Sn1(2)-Sn2] below and above the T* in the (110) plane. XANES spectra at the Ir L3-edge and the Sn K-edge demonstrated an increase (decrease) in the unoccupied (occupied) density of Ir 5d-derived states and nearly constant density of Sn 5p-derived states at temperatures T < T*, in the (110) plane. These observations clearly suggest that the Ir 5d-derived states are closely related to the anomalous resistivity transition. Accordingly, a close relationship exists between local electronic and atomic structures and the 2D-CDW-like phase in the SIS single crystal.
第三語言摘要
論文目次
目錄
致謝	i
圖表目錄	iii
第一章、緒論	1
1-1. 文獻回顧	1
1-2. 電荷密度波(Charge density wave)	3
第二章、實驗技術	6
2-1. 同步輻射	6
2-2. X光吸收光譜簡介	7
2-2-1. 吸收邊緣與E0值	9
2-2-2. X光吸收近邊緣結構(XANES)	10
2-2-3. 延伸X光吸收精細結構(EXAFS)	11
2-2-4. 實驗方法	16
2-2-5. 數據分析	20
第三章、實驗數據分析與討論	24
3-1. 樣品製備與基本量測	24
3-2. X光散射(XRS)之分析	29
3-3. 延伸X光吸收精細結構(Extended X-ray Absorption Fine Structure、EXAFS)之分析	33
3-4. X光吸收近邊緣結構(X-ray Absorption Near-Edge Structure、XANES)之分析	41
第四章、結論	56
參考文獻	57


圖表目錄
圖1-1(a) CDW發生前電荷間是趨向等距分佈	5
圖1-1(b) CDW發生後電荷間能自行調制藉由不等距分佈來降低系統總能	5
圖2-1光子能量與同吸收截面關係圖	8
圖2-2 XANES與EXAFS分界圖	13
圖2-3光電子平均自由路徑與能量關係圖	13
圖2-4單一散射與多重散射之圖像	14
圖2-5射出電子受鄰近原子的背向散射,而產生干涉現象	15
圖2-6 X光吸收光譜實驗示意圖	17
圖2-7三種光譜量測方法	19
圖2-8 X光吸收光譜之數據分析流程	20
圖3-1 SIS樣品(2 2 0)繞射峰	26
圖3-2 SIS樣品(1 1 0)平面之(a)變溫電阻率量測圖	27
(b)two theta long scan	27
圖3-3 (a)SIS樣品於I phase時的結構	28
(b)同步輻射光源電場偏振平行於(1 1 0)平面	28
(c)同步輻射光源電場偏振垂直於(1 1 0)平面	28
圖3-4不同溫度下針對衛星峰(3.5 4.5 0)所做量測結果	31
圖3-5衛星峰(3.5 4.5 0)積分強度以及半高寬對溫度作圖	32
圖3-6電場平行(1 1 0)平面變溫Sn K –edge EXAFS圖譜	35
圖3-7電場垂直(1 1 0)平面變溫Sn K –edge EXAFS圖譜	36
圖3-8電場平行(1 1 0)平面phase derivative analysis	39
圖3-9電場垂直(1 1 0)平面phase derivative analysis	40
圖3-10 (a)電場平行(1 1 0)平面Ir L3-edge變溫XANES圖譜	43
圖3-10 (b)電場垂直(1 1 0)平面Ir L3-edge變溫XANES圖譜	44
圖3-11電場平行及垂直(1 1 0)平面扣除背景值後積分強度對溫度作圖	45
圖3-12 (a)電場平行(1 1 0)平面Sn K-edge變溫XANES圖譜	47
圖3-12 (b)電場垂直(1 1 0)平面Sn K-edge變溫XANES圖譜	48
圖3-13 (a)高溫與低溫下平行(1 1 0)平面ARPES圖譜	52
圖3-13 (b)高溫與低溫下垂直(1 1 0)平面ARPES圖譜	53
圖3-14 (a)不同溫度下平行(1 1 0)平面費米面附近ARPES圖譜及一階微分結果	54
圖3-14 (b)不同溫度下垂直(1 1 0)平面費米面附近ARPES圖譜及一階微分結果	55
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