在現代的科技產業中，許多電路都將類比式轉換成數位式，而數位電路中又以時序電路為主體，然而振盪器電路就在其中扮演著不可或缺的角色。因3C產業的蓬勃發展，其中的最大訴求為輕、薄、省電及節省成本，然而要在節省面積及降低功率消耗的條件下，系統依然必須保持穩定則是本次研究之目的。
    從微處理器之時脈產生到行動電話的載波合成，都需要不同的振盪器電路和效能參數。不同形式振盪器中，屬石英振盪器對製程及溫度(Process, Temperature)最為穩定，此論文目標則是設計出一個具自動偵測製程、溫度漂移補償之低供應電壓參考時振盪器電路。
    整體電路分為三大部分，第一部分為四級差動延遲單位所組成的電壓控制環型振盪器，則此電壓控制環型振盪器會因製程及溫度的變化而造成在固定的控制電壓下，所產生的輸出頻率會有所不同。第二部分為雙端轉單端頻率輸出電路，此電路目的為調整輸出頻率之責任週期(Duty Cycle)在50%的目標。第三部分為頻率電壓轉換器電路，此電路會因輸入頻率不同而轉換不同的電壓輸出，進而校正電壓控制振盪器因為製程及溫度不同下的變化。整體電路結合這三大部分電路，因為頻率電壓轉換器電路可校正電壓控制環型振盪器在不同的製程及溫度變化下所產生的輸出頻率，進而提供不同的輸出電壓去控制電壓控制環型振盪器的控制端，因為電路為閉迴路的關係形成收斂的狀態，而使得輸出頻率可以穩定在目標25MHz下，達到製程及溫度變化的補償。

In the modern technology industry, many analog circuits are converted to digital, and digital circuits to sequential circuits as the main, however, the oscillator circuit in which plays a crucial role. 3C because of the booming industry, which is the maximum demands of light, thin , low power and cost savings, but to save space and under conditions to reduce power consumption , the system still must remain stable is the purpose of this study.
From clock generated of the microprocessor to the mobile phone carrier synthesis which requires different oscillator circuit and performance parameters. Different forms of oscillators, quartz oscillator that on process and temperature is the most stable, design a tool to automatically detect the process, low temperature drift compensation supply voltage reference oscillator circuit that is this thesis target.
Whole circuit is divided into three parts, the first part of the four differential voltage controlled delay units consisting ring oscillator, this voltage controlled ring oscillator due process and temperature variations caused by the control voltage at a fixed, the resulting output frequency will vary. The second part is the frequency of differential-ended to single-ended output circuit that aims to adjust the duty cycle of the output frequency of 50 %. The third part is a frequency-to-voltage converter circuit, the circuit will differ due to the input frequency converter output voltage, thus the voltage controlled oscillator as the correction process, and temperature changes under different. The combination of these three major overall circuit , since the frequency-to-voltage converter circuit can correct voltage controlled oscillator under different process and temperature variations generated output frequency ,and thus provide different output voltages to control the voltage-controll oscillator a control terminal device , since the relationship between the closed loop circuit is formed as a convergent state, and that the output can be stabilized at the target frequency of 25MHz, to achieve the compensation process and temperature variation .

致謝 ..................................................... I
中文摘要 ................................................. II
ABSTRACT................................................ III
目錄 ..................................................... V
圖目錄 .................................................. VII
表目錄 ................................................... IX
第一章 緒論 ............................................... 1
1.1 研究背景與動機 ......................................... 1
1.2 設計流程 .............................................. 2
1.3 論文架構 .............................................. 4
第二章 電路原理與參數分析..................................... 5
2.1 製程與溫度參數分析 ...................................... 5
2.1.1 製程變異係數(Process Variation Coefficient) .......... 6
2.1.2 溫度變異係數(Temperature Variation Coefficient) ...... 6
2.2 振盪器概論 ............................................ 8
2.2.1 單端輸入環型振盪器 .................................... 9
2.2.2 雙端差動輸入環型振盪器 ................................ 11
2.3 類比式與數位式補償振盪器比較 ............................. 13
2.3.1 類比式補償之振盪器電路 ................................ 14
2.3.2 數位式補償之振盪器電路 ................................ 17
2.3.3 文獻分析結論 ........................................ 19
第三章 具製程及溫度漂移補償之參考時脈振盪器電路設計 .............. 21
3.1 具製程及溫度漂移補償之振盪器設計 .......................... 21
3.1.1 差動輸入環型振盪器 ................................... 22
3.1.2 雙端轉單端頻率輸出電路 ................................ 24
3.1.3 頻率電壓轉換器 ...................................... 25
3.2 電路模擬與佈局 ........................................ 27
第四章 電路量測與分析 ...................................... 39
4.1 量測考量及結果 ........................................ 39
第五章 結論 .............................................. 45
5.1 結論與未來展望 ........................................ 45
參考文獻 ................................................. 46
圖目錄
圖 1.1 晶片設計流程圖 ....................................... 3
圖 2.1 振盪器受製程與溫度變異影響示意圖 ........................ 5
圖 2.2 溫度補償前振盪頻率與溫度補償後振盪頻率示意圖............... 8
圖 2.3 振盪器線性模型 ....................................... 9
圖 2.4 傳統三級環型振盪器 .................................. 10
圖 2.5 傳統三級環型振盪器理想時序圖 .......................... 11
圖 2.6 差動輸入延遲單位 .................................... 12
圖 2.7 差動輸入環型振盪器 .................................. 12
圖 2.8 四級差動輸入環型振盪器時序圖 .......................... 13
圖 2.9 低功耗具溫度補償振盪器 ............................... 14
圖 2.10 具製程及溫度補償之振盪器電路 ......................... 16
圖 2.11 延遲比例估算電路 ................................... 17
圖 2.12 使用關係參考模組之低電壓全數位振盪器 ................... 17
圖 2.13 具可程式開關陣列之參考頻率 ........................... 18
圖 3.1 具製程及溫度漂移補償參考時脈振盪器電路架構 ............... 21
圖 3.2 電路操作示意圖 ...................................... 22
圖 3.3 四級差動輸入環型振盪器 ............................... 23
圖 3.4 差動延遲單位 ....................................... 23
圖 3.5 雙端轉單端頻率輸出電路 (CKAMR) ....................... 24
圖 3.6 頻率電壓轉換器(FVC) ................................. 25
圖 3.7 頻率電壓轉換器時序圖 ................................. 25
圖 3.8 製程狀態FF 頻率對應電壓變化 .......................... 28
圖 3.9 製程狀態TT 頻率對應電壓變化 .......................... 28
圖 3.10 製程狀態SS 頻率對應電壓變化 ......................... 29
圖 3.11 製程狀態FF 在27℃下的責任週期 ........................ 30
圖 3.12 製程狀態TT 在27℃下的責任週期 ........................ 30
圖 3.13 製程狀態SS 在27℃下的責任週期 ........................ 31
圖 3.14 製程變異下頻率對溫度的變化 ........................... 31
圖 3.15 製程狀態FF 在27℃下的責任週期 ........................ 33
圖 3.16 製程狀態TT 在27℃下的責任週期 ........................ 34
圖 3.17 製程狀態SS 在27℃下的責任週期 ........................ 34
圖 3.18 製程變異下頻率對溫度的變化 ........................... 36
圖 3.19 電路佈局圖 ........................................ 37
圖 3.20 電路佈局示意圖 ..................................... 38
圖 4.1 量測示意圖 ......................................... 39
圖 4.2 波型量測圖 ......................................... 40
圖 4.3 對溫度變化下之輸出頻率統計圖 .......................... 41
圖 4.4 量測波型抖動量 ...................................... 41
圖 4.5 頻譜分析圖 ......................................... 42
圖 4.6 相位雜訊分布 ....................................... 42
圖 4.7 晶片實拍圖 ......................................... 43
表目錄
表 2.1 數位式與類比式作法參考文獻比較表 ....................... 20
表 3.1 製程變異下頻率對溫度的變化統計表 ....................... 32
表 3.2 製程變異下頻率對溫度的變化統計表 ....................... 35
表 3.3 Pre-layout simulation 與 Post-layout simulation 比較表 .................. 36
表 4.1 對溫度變化下之輸出頻率統計表 .......................... 40
表 4.2 量測結果表 ......................................... 43
表 4.3 文獻結果比較表 ...................................... 44

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