系統識別號 | U0002-2407200718120800 |
---|---|
DOI | 10.6846/TKU.2007.00742 |
論文名稱(中文) | 矽基材表面性狀對奈米碳管成長機制影響之研究 |
論文名稱(英文) | Influence of Surface Integrity of Silicon Substrate on the Growth Mechanisms of Carbon Nanotube |
第三語言論文名稱 | |
校院名稱 | 淡江大學 |
系所名稱(中文) | 機械與機電工程學系碩士班 |
系所名稱(英文) | Department of Mechanical and Electro-Mechanical Engineering |
外國學位學校名稱 | |
外國學位學院名稱 | |
外國學位研究所名稱 | |
學年度 | 95 |
學期 | 2 |
出版年 | 96 |
研究生(中文) | 許家偉 |
研究生(英文) | Chia-Wei Hsu |
學號 | 694341776 |
學位類別 | 碩士 |
語言別 | 繁體中文 |
第二語言別 | |
口試日期 | 2007-06-30 |
論文頁數 | 75頁 |
口試委員 |
指導教授
-
趙崇禮
委員 - 劉道恕 委員 - 趙崇禮 委員 - 陳盈同 委員 - 趙崇偉 委員 - 陳大同 |
關鍵字(中) |
奈米碳管 化學氣相沉積 變質層 |
關鍵字(英) |
carbon nanotubes chemical vapor deposition amorphous layer |
第三語言關鍵字 | |
學科別分類 | |
中文摘要 |
在本研究中採用化學氣相沉積法利用乙炔作為碳源,二茂鐵和二甲苯則作為金屬催化劑反應沉積奈米碳管。藉由改變矽基材表面處理參數,進而觀察不同矽基材表面處理參數對奈米碳管成長之影響,並且利用場發射掃描式電子顯微鏡觀察奈米碳管之成長形態。 研究結果顯示,經過大氣電漿表面處理過後的試片,很清楚的觀察到900℃都有成長濃密且長的奈米碳管,大氣電漿表面處理可明顯改善試片表面的吸附能力,使得碳原子和催化劑能有效地沉積在試片表面。經過壓痕處理以及輪磨處理過後的試片,因材料表面發生塑性變形而產生變質層,從反應溫度790℃之後可以很明顯的觀察到變質層較厚的試片與變質層中含鐵量較多的試片成長的奈米碳管非常的濃密,故變質層的厚薄程度與變質層中含鐵量的多寡可以很明顯的影響奈米碳管的成長。 |
英文摘要 |
Chemical vapor deposition(CVD)was adopted in this research to synthesize multi-wall carbon nanotubes (MWCNT) where acetylene was used as carbon source and ferrocene-xylene worked as catalyst. Various surface pre-treatments were made on the silicon substrate to investigate the effect of the surface integrity on the growth of MWCNT. The morphology and characteristics of obtained carbon nanotubes were analyzed using field-emission scanning electron microscope(FESEM)and micro-Raman spectrometer. Results showed that atmospheric pressure air plasma(APAP)surface pre-treatment could increase the deposition rate of carbon and extend the growing temperature to up around 900℃. The amorphous layer induced by indentation or grinding processes, especially those having iron diffused into the amorphous layer, proved to have profound effect on the growth rate and growing temperature of carbon nanotube. |
第三語言摘要 | |
論文目次 |
目錄 中文摘要 I 英文摘要 II 致謝 IV 目錄 V 圖目錄 IX 表目錄 XI 第1章 序論 1 1-1 前言 1 1-2 研究動機 3 第2章 文獻回顧與理論基礎 4 2-1 奈米碳管的歷史發展 4 2-2 奈米碳管的結構 6 2-3 奈米碳管之製備方法 8 2-3-1 雷射蒸發法( laser ablation process) 8 2-3-2 電弧放電法( electric arc discharge ) 9 2-3-3 化學氣相沉積法(Chemical Vapor Deposition, CVD) 10 2-3-4 低溫固體熱解法 11 2-4 奈米碳管的成長機制 11 2-5 奈米碳管的特性與應用 13 2-5-1 奈米碳管強化複合材料 13 2-5-2 原子力顯微鏡(Atomic Force Microscopy, AFM)之探針 15 2-5-3 場發射性質的應用 16 2-5-4 其他方面的應用 19 2-6 電漿原理、種類與電漿表面處理 20 2-6-1 電漿原理 20 2-6-2 電漿的產生方式 23 2-6-3 電漿表面處理 25 2.7 輪磨原理 27 2.8 變質層 29 2.9歐傑電子能譜儀縱深分佈 30 第3章 實驗方法與設備 31 3-1 實驗規劃 31 3-2 實驗設備 31 3-2-1 化學氣相沉積設備 31 3-2-2 大氣電漿表面處理設備 32 3-2-3 檢測儀器 33 3-3 實驗步驟 34 3-4 實驗流程 36 3-5實驗參數之規劃 37 第4章 結果與討論 38 4-1 電漿表面處理 38 4-2 壓痕表面處理 46 4-3 輪磨表面處理 52 4-4 不同磨輪之輪磨表面處理 58 第5章 結論 67 第6章 參考文獻 68 圖目錄 圖1-1 碳的同素異形體 2 圖2-1 C60分子模型 5 圖2-2 奈米碳管的HRTEM照片(A)5層管壁 (B) 2層管壁 (C) 7層管壁 5 圖2-3 二維片狀的石墨結構圖 7 圖2-4 奈米碳管的各種結構 (A)ARMCHAIR (B)ZIGZAG (C)CHIRAL 7 圖2-8 碳經由催化劑擴散成長機制示意圖 12 圖2-9 (A)頂端成長模式 (B)底部成長模式 13 圖2-10 奈米碳管高分子複合薄膜之破裂圖 15 圖2-11 (A)傳統探針 (B)奈米碳管探針 16 圖2-12 傳統探針與奈米碳管探針觀測高深寬比特徵差異 16 圖2-13 韓國三星電子所製造之奈米碳管平面顯示器 18 圖2-14 奈米碳管平面顯示器內部示意圖 18 圖2-15 平行板電極之電壓與P×D乘積關係圖 22 圖2-16 低壓直流輝光放電的電流–電壓關係圖 22 圖2-17 大氣電漿的電流–電壓關係圖 22 圖2-18各種不同的電漿源(A)電暈放電(B)介電質放電(C)電漿火焰 24 (D)電漿噴射 24 圖 2-22 輪磨加工磨粒移除材料形態 28 圖 2-23 砂輪之三種磨耗形式(A) ATTRIRIOUS WEAR (B) GRAIN FRACTURE (C) BOND FRACTURE 28 圖2-24 變質層 29 圖2-25歐傑電子示意圖 30 圖3-1 化學氣相沉積設備 31 圖3-2 化學氣相沉積設備示意圖 32 圖3-3大氣電漿表面處理設備圖 33 圖3-4 掃描式電子顯微鏡(HITACHI S4160型) 34 圖3-5 電漿表面處理示意圖 35 圖4-1 沒有刮痕的試片未經電漿表面處理之奈米碳管(A)700OC (B)730OC (C)760OC (D)790OC (E)810OC (F)840OC (G)870OC (H)900OC 40 圖4-2 沒有刮痕的試片電漿表面處理60秒之奈米碳管(A)700OC (B)730OC (C)760OC (D)790OC (E)810OC (F)840OC (G)870OC (H)900OC 41 圖4-3 沒有刮痕的試片電漿表面處理120秒之奈米碳管(A)700OC (B)730OC (C)760OC (D)790OC (E)810OC (F)840OC (G)870OC (H)900OC 42 圖4-4有刮痕試片未經電漿表面處理之奈米碳管(A)700OC (B)730OC (C)760OC (D)790OC (E)810OC (F)840OC (G)870OC (H)900OC 43 圖4-5有刮痕試片電漿表面處理60秒之奈米碳管(A)700OC (B)730OC (C)760OC (D)790OC (E)810OC (F)840OC (G)870OC (H)900OC 44 圖4-6有刮痕試片電漿表面處理120秒之奈米碳管(A)700OC (B)730OC (C)760OC (D)790OC (E)810OC (F)840OC (G)870OC (H)900OC 45 圖4-7不同輪磨試片之TEM圖 (A)6K-02 (B)6K-09 (C)6K-17 64 圖4-8不同輪磨試片之AES圖 (A)6K-02 (B)6K-09 65 表目錄 表2-1 奈米碳管可能的應用 19 表2-2 高分子材料經電漿處理後的性質改變 26 表4-1氫氟酸蝕刻壓痕前後所成長奈米碳管(反應時間1分鐘)之SEM比較表 48 表4-2氫氟酸蝕刻壓痕前後所成長奈米碳管(反應時間5分鐘)之SEM比較表 50 表4-3氫氟酸蝕刻輪磨試片前後奈米碳管成長之SEM比較表 54 表4-4不同輪磨試片成長奈米碳管之SEM比較表 60 表4-5輪磨試片未加入催化劑成長奈米碳管之SEM比較表 66 |
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