在系統晶片化的時代，時序電路儼然就是數位電路的中樞，振盪器更在其中扮演一個關鍵性的元件。目前3C產品的蓬勃發展中，皆以輕、薄、省電與節省成本為最大訴求，在應用上，因此在節省面積與降低功率消耗的同時，加入了各種頻率調整的功能，而使系統依然保持著穩定的操作便是此研究目的。
   系統晶片會隨著製程與溫度偏異而產生飄移，電路上會產生非理想的偏異，會造成系統上的不穩定，進而造成晶片的不正常工作，更嚴重而導致晶片的損壞，如何設計出一個不隨製程與溫度變異的可調式振盪器便是研究中一個重要的議題，在電路的設計上使用CMOS大幅降低功率的損耗，因此，此論文目標為設計出一個具製程及溫度補償之頻率可調式電流控制振盪器電路。
    整體電路可分為兩大部分，第一部分為設計偏壓參考電流源，其中包含了正溫度係數電流與負溫度係數電流來完成溫度補償。接著利用輸出電流調整電路來調整頻率與補償因為製程所產生的變異。第二部份為五級單端延遲單位所組成的環型振盪器。在正常供應電壓1.8V操作環境下，前模擬的溫度變化在-25~75℃時四種頻率其溫度變異係數皆小於88ppm/℃。最後我們所提出之具製程及溫度補償之頻率可調式電流控制振盪器電路，後模擬的溫度變化在-25~75℃時四種頻率溫度變異係數皆小於96 ppm/℃。功率消耗在各種頻率、製程及溫度變異下，皆小於92.9 uW，加入output buffer時，在各種頻率、製程及溫度變異下，功率消耗皆小於520.9 uW。

This thesis presents two oscillators with detecting process and temperature (PT) drift working in 1.8V supply voltage for 10、20、30、40-MHz clock oscillator. The oscillator circuits are composed of current reference circuit and ring oscillator. 
This paper describes a circuit, which generates a low temperature-dependent bias currents. The current reference circuit is composed of complementary-to-absolute -temperature (CTAT) and a proportional-to-absolute-temperature (PTAT) to compensated temperature variation. And output current adjustment circuit is used to overcome process variation. In this paper, low temperature coefficient reference is presented. The circuit is firstly employed to generate a current reference with temperature compensation, then, supply current to the current controlled ring oscillator (CCO). There are four different oscillation frequency with temperature and process compensation has been completed, they are 10MHz, 20MHz, 30MHz and 40MHz respectively. The proposed circuit has been design by a 0.18um CMOS technology process and using computer simulation to evaluate the thermal drift of the reference current. In post-simulation, the temperature coefficient of the proposed CCO is less than 68 ppm/℃ in the variety of process variation and temperature range between -25 and 75℃ at 10MHz. In the 20MHz, 30MHz and 40MHz oscillation frequency, the temperature coefficients are 83 ppm/℃, 96 ppm/℃ and 96 ppm/℃ respectively. Power consumption is less than 92.9 uW without output buffer and less than 520.9 uW with output buffer.

中文摘要	I
英文摘要	II
內文目錄	III
圖表目錄	VI

第一章  緒論	1
1.1 研究背景與動機	1
1.2 設計流程	2
1.3 論文架構	4

第二章  電源控制振盪器電路參數分析與原理	5
2.1製程與溫度參數分析	6
2.1.1溫度變異係數	6
2.2參考電流源	8
2.2.1參考電流源與溫度變異係數關係分析	9
2.3振盪器概論	9
2.3.1單端輸入環型振盪器	12
2.3.2雙端差動輸入環型振盪器	14
2.4文獻回顧與探討	16
2.4.1數位式具製程、溫度補償之參考電流源	17
2.4.2 類比式能帶間隙參考電流源電路 	18
2.4.3類比式具溫度補償之參考電流源	20
2.4.4類比式全CMOS設計溫度補償參考電流源電路	21
2.4.5數位式具溫度補償振盪器電路	23
2.4.6類比式具溫度、製程補償之振盪器電路	24
第三章  具溫度及製程補償之頻率可調式電流控制振盪器電路設計	27
3.1電流控制振盪器設計	27
3.1.1參考電流源電路設計	29
3.1.2單端輸入環型振盪器	37
3.2電路模擬與佈局	39
3.3量測考量與結果	64
第四章  結論	68
4.1結論與未來展望	68

參考文獻	70

圖目錄
圖1.1晶片設計流程圖	3
圖2.1振盪器受製程與溫度變異影響示意圖	6
圖2.2溫度補償前振盪頻率與溫度補償後振盪頻率示意圖	7
圖2.3具溫度補償參考電流源系統架構圖	9
圖2.4振盪器線性模型	11
圖2.5傳統三級環型振盪器	12
圖2.6傳統三級環型振盪器理想時序圖	13
圖2.7差動輸入環型振盪器	15
圖2.8四級差動輸入環型振盪器時序圖	15
圖2.9數位式具製程、溫度補償之參考電流源	17
圖2.10參考電流示意圖	18
圖2.11 MOS電壓與電流溫度曲線圖	18
圖2.12能帶間隙參考電流源電路架構	19
圖2.13類比式溫度補償電流源電路	20
圖2.14全CMOS 設計之溫度補償參考電流源電圖	22
圖2.15數位式具溫度補償振盪器電路	24
圖2.16具溫度及製程補償之振盪器電路	24
圖3.1具溫度及製程飄移補償之頻率可調式電流控制振盪器電路架	27
圖3.2具溫度及製程漂移補償之頻率可調式電流控制振盪器設計流程圖	28
圖3.3參考電流架構圖	29
圖3.4參考電流電路	30
圖3.5與供應電壓無關之PTAT電流源電路	32
圖3.6參考電流電路加入APFO<2:0>與PCTC<7:0>	36
圖3.7單端輸入環形振盪器	38
圖3.8(a)輸出頻率10MHz對溫度變異模擬圖(TT)	40
圖3.8(b)輸出頻率10MHz對溫度變異模擬圖(FF)	40
圖3.8(c)輸出頻率10MHz對溫度變異模擬圖(SS)	40
圖3.9(a)輸出頻率20MHz對溫度變異模擬圖(TT)	41
圖3.9(b)輸出頻率20MHz對溫度變異模擬圖(FF)	41
圖3.9(c)輸出頻率20MHz對溫度變異模擬圖(SS)	42
圖3.10(a)輸出頻率30MHz對溫度變異模擬圖(TT)	42
圖3.10(b)輸出頻率30MHz對溫度變異模擬圖(FF)	43
圖3.10(c)輸出頻率30MHz對溫度變異模擬圖(SS)	43
圖3.11(a)輸出頻率40MHz對溫度變異模擬圖(TT)	44
圖3.11(b)輸出頻率40MHz對溫度變異模擬圖(FF)	44
圖3.11(c)輸出頻率40MHz對溫度變異模擬圖(SS)	44
圖3.12(a)10MHz責任週期(TT)	45
圖3.12(b)10MHz責任週期(FF)	45
圖3.12(c)10MHz責任週期(SS)	46
圖3.13(a)20MHz責任週期(TT)	46
圖3.13(b)20MHz責任週期(FF)	47
圖3.13(c)20MHz責任週期(SS)	47
圖3.14(a)30MHz責任週期(TT)	48
圖3.14(b)30MHz責任週期(FF)	48
圖3.14(c)30MHz責任週期(SS)	48
圖3.15(a)40MHz責任週期(TT)	49
圖3.15(b)40MHz責任週期(FF)	49
圖3.15(c)40MHz責任週期(SS)	49
圖3.16電路佈局圖具製程、電壓及溫度飄移補償之低供應電壓參考時脈振盪器架構圖	51
圖3.17電流佈局示意圖	52
圖3.18(a) Post-layout Sim.10Meg輸出頻率對溫度變異模擬圖(TT)	53
圖3.18(b) Post-layout Sim.10Meg輸出頻率對溫度變異模擬圖(FF)	53
圖3.18(c) Post-layout Sim.10Meg輸出頻率對溫度變異模擬圖(SS)	53
圖3.19(a) Post-layout Sim.20Meg輸出頻率對溫度變異模擬圖(TT)	54
圖3.19(b) Post-layout Sim.20Meg輸出頻率對溫度變異模擬圖(FF)	54
圖3.19(c) Post-layout Sim.20Meg輸出頻率對溫度變異模擬圖(SS)	55
圖3.20(a) Post-layout Sim.30Meg輸出頻率對溫度變異模擬圖(TT)	55
圖3.20(b) Post-layout Sim.30Meg輸出頻率對溫度變異模擬圖(FF)	56
圖3.20(c) Post-layout Sim.30Meg輸出頻率對溫度變異模擬圖(SS)	56
圖3.21(a) Post-layout Sim.40Meg輸出頻率對溫度變異模擬圖(TT)	57
圖3.21(b) Post-layout Sim.40Meg輸出頻率對溫度變異模擬圖(FF)	57
圖3.21(c) Post-layout Sim.40Meg輸出頻率對溫度變異模擬圖(SS)	57
圖3.22(a) Post-layout Sim.10Meg責任週期(TT)	58
圖3.22(b) Post-layout Sim.10Meg責任週期(FF)	58
圖3.22(c) Post-layout Sim.10Meg責任週期(SS)	59
圖3.23(a) Post-layout Sim.20Meg責任週期(TT)	59
圖3.23(b) Post-layout Sim.20Meg責任週期(FF)	60
圖3.23(c) Post-layout Sim.20Meg責任週期(SS)	60
圖3.24(a) Post-layout Sim .30Meg責任週期(TT)	61
圖3.24(b) Post-layout Sim .30Meg責任週期(FF)	61
圖3.24(c) Post-layout Sim .30Meg責任週期(SS)	61
圖3.25(a) Post-layout Sim .40Meg責任週期(TT)	62
圖3.25(b) Post-layout Sim .40Meg責任週期(FF)	62
圖3.25(c) Post-layout Sim .40Meg責任週期(SS)	63
圖3.26量測儀器示意圖	63
圖3.27 10Meg量測波型圖	65
圖3.28 20Meg量測波型圖	65
圖3.29 30Meg量測波型圖	66
圖3.30 40Meg量測波型圖	66
                                                         

表目錄

表2.1數位式作法與類比式作法參考文獻比較表	26
表3.1 Pre-Layout Simulation Results	50
表3.2 Post-Layout Simulation Results	63

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