此論文主要是對碲化鋅燒製溫度變化和摻雜鋁變化之X光近邊緣結構 (X-ray absorption near edge structure，XANES)和延伸X光吸收精細結構 (X-ray absorption fine structure，EXAFS)還有電阻率(Resistivity)和熱電力(Seebeck)做數據分析。XANES的結果指出隨著燒製溫度上升，Zn的K-edge主吸收峰吸收強度減弱而衛星峰吸收強度增強，Te的L3-edge主吸收峰吸收強度沒有明顯變化，肩峰吸收強度減弱，此結果顯示Zn的5d軌域與Zn的4s軌域有混成的現象且隨著燒製溫度上升而增強，顯示Te 5p有電子轉移Zn 4s與Zn 4p現象。在Zn K-edge EXAFS的結果顯示隨燒製溫度上升的第一配位層的主峰強度減少，表示原子排序亂度變大且有雜相。在摻雜鋁變化中，在摻了Al0.05後，Zn 4s有電子轉移Te 5p現象，Te 5p未佔據態隨摻Al0.05而空軌域變多，顯示其電洞載子增加，電阻率下降和其有關。

This thesis studies zinc telluride doped with aluminum and fired at different temperatures. X-ray absorption near edge structure, (XANES) and X-ray absorption fine structure, (EXAFS). Our results are compared with the thermal power (Seebeck) and resistivity measruements. The results indicated that as the firing temperature increases  Zn K-edge XANES main absorption peak intensity decreased and the satellite peak intensity enhances. Te L3-edge main absorption peak intensity does not change significantly and the intensity of the shoulder shows that the 5d orbitals of Zn and Zn 4s orbitals have significant hybridization. As the firing temperature rises a Te 5p to Zn 4s and Zn 4p. electron transfer are observed. Zn K-edge EXAFS results show that the first shell peak intensity decreased with the firing temperature, which indicates the atomic ordering becomes larger. In sample doped with 5% Al , there is a Zn 4s Te 5p to Te 5p electron transfer. Unoccupied states and empty orbitals increases, which indicates the hole carriers increases in Al doped sample. The result in consistence with transport measurements.

致謝 ........................................................................................................Ⅰ
中文摘要..................................................................................................Ⅱ
英文摘要..................................................................................................Ⅲ
目錄..........................................................................................................Ⅳ
圖表目錄..................................................................................................Ⅵ
第一章  緒論
       緒論 ……….…………………………………………………...1
第二章  樣品簡介………………………………………………………3
       2.1 ZnTe的特性……….………………………………………..3
       2.2熱電性質相關理論簡介…………………….……………...6
       2.3樣品製程.................................................................................7
第三章  X光吸收光譜的介紹………………………………………....9
       3.1 X光吸收光譜近邊緣結構 (XANES)……………………13
       3.2延伸X光吸收光譜精細結構 (EXAFS)…………………14
       3.3數據分析…………………………………………………..16
第四章  實驗設備與量測方法………………………………………..22
       4.1 X光光源…………………………………………………..22
       4.2單色儀……………………………………………………..24
       4.3光譜測量方式……………………………………………..24
       4.4測量之樣品的處理與準備………………………………..28
第五章  實驗結果與討論……………………………………………..29
       5.1 ZnTe燒製溫度170℃、180℃、460℃系列………………29
       5.2 Zn1-xTeAlX(X=0, 0.05, 0.15)系列……………………….……….38
       5.3 Zn1-xTeAlX(X=0, 0.05, 0.15)系列TEM檢測……………...…….50
第六章  結論….……………………………………………………….67
參考文獻………………………………………………………………..69






















圖表目錄
圖2.1碲化鋅為閃鋅礦晶體結構.………………………………………2
圖2.2 Zn和Te離子鍵結結合圖…….…………….……………………4
圖2.3 ZnTe摻雜Al之電阻率與溫度關係圖………….………………5
圖2.4 ZnTe摻雜Al之熱電力與溫度關係圖…….……………………5
表2.1水熱法製備Zn1-xTeAlx (x=0, 0.05, 0.1, 0.15)粉末及塊材過程………….7
圖3.1物質吸收截面與能量之關係圖…………………….…………...11
圖3.2 XANES與EXAFS分界圖………………………………………12
圖3.3光電子平均自由路徑與能量關係圖…..……………………….13
圖3.4單一散射與多重散射之圖示………..………………………….14
圖3.5出射電子受鄰近原子的背向散射，而產生干涉現象…….…….15
圖3.6 X光吸收光譜之數據分析流程…………...…………………….16
圖3.6物質吸收截面與能量之關係圖…………….…………………..14
圖3.7選擇能量底限E0值的不同方法………….……….……………..18
圖4.1 X光吸收光譜實驗示意圖………….…….……………………..23
圖4.2穿透式………………………………….…….…………………..25
圖4.3 X光通過物質之強度衰減，入射X光強度I0，穿過後之強度I，物質厚度dx……………………………………………………….….....25
圖4.4螢光式……………………………………………………………27
圖4.5電子逸出式..………………………..……………………………27
圖4.6光子吸收過程……………………..……………………………..27
圖5.1 ZnTe燒製溫度170℃的Zn K-edge吸收光譜圖…………..……32
圖5.2 ZnTe燒製溫度170℃、180℃、460℃變化，Zn K-edge吸收光譜圖……………………………………………………………………..33
圖5.3 ZnTe燒製溫度170℃的Zn K-edge吸收光譜圖………………..34
圖5.4 ZnTe燒製溫度170℃、180℃、460℃變化，Zn K-edge吸收光譜圖……………………………………………………………………..35
圖5.5 ZnTe燒製溫度170℃ Zn K-edge EXAFS 經Fourier transform的譜圖……………………………………………………………………..36
圖5.6 ZnTe燒製溫度變化之 Zn K-edge EXAFS 經Fourier transform的譜圖…………………………………………………………………..37
圖5.7 ZnTe燒製溫度460℃及摻雜Al0.05的Zn K-edge吸收光譜圖….42
圖5.8 ZnTe未摻雜及摻雜Al0.05 ,Al0.15的Zn K-edge吸收光譜圖…….43
圖5.9 ZnTe摻雜Al0.05的Te L3-edge吸收光譜圖…………………..….44
圖5.10加入ZnTe摻雜Al0.15的Te L3-edge吸收光譜圖………….……45
圖5.11 ZnTe燒製溫度460℃ Zn K-edge EXAFS經Fourier transform的譜圖……………………………………………………………….….46
圖5.12加入ZnTe摻雜Al0.05之Zn K-edge EXAFS經Fourier transform的譜圖……………………………………………………………….….47
圖5.13加入ZnTe摻雜Al0.15之 Zn K-edge EXAFS 經Fourier transform的譜圖…………………………………………………………….…….48
圖5.14摻雜Al0.15及ZnO比較之Zn K-edge EXAFS 經Fourier transform的譜圖………………………………...……………..49
圖5.15 ZnTe燒製溫度460℃的明場像倍率50k………………………51
圖5.16 ZnTe明場像所形成之繞射圖………………………..………...52
圖5.17 ZnTe高解析圖像倍率600k………………...………………….53
圖5.18 ZnTe高解析圖像所形成的FFT圖………………………….....54
圖5.19 Zn0.95TeAl0.05燒製溫度460℃的明場像...…………...………...56
圖5.20 Zn0.95TeAl0.05燒製溫度460℃繞射圖像…………...…………..57
圖5.21 Zn0.95TeAl0.05高解析圖像………………………………………58
圖5.22 Zn0.95TeAl0.05高解析圖像所形成的FFT圖……….…………..59
圖5.23 Zn0.85TeAl0.15燒製溫度460℃的明場像….……………...…….61
圖5.24 Zn0.85TeAl0.15繞射圖像………………………………………....62
圖5.25 Zn0.85TeAl0.15高解析圖像倍率600k…………………….…….63
圖5.26 Zn0.85TeAl0.15高解析圖像倍率600k所形成的FFT圖...…..…..64
圖5.27 Zn0.85TeAl0.15高解析圖像1M倍率………………….…………65
圖5.26 Zn0.85TeAl0.15高解析圖像1M倍率所形成的FFT圖………..…66

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