本研究利用共沉澱法在室溫下製備銦錫氧化物奈米片條，經由高溫煆燒轉變成銦錫氧化物奈米片條。形成的銦錫氧化物粉體分散在丙醇中，加入壓克力黏合劑、界面活性劑和起始劑配置塗佈液，以刮刀塗佈在玻璃基板上，並經過紫外光或熱硬化後，真空烘烤可得ITO透明導電塗膜。在此研究中探討銦/錫比、煆燒條件、刮膜液成分、水解縮合時間、和刮膜方式對製作的塗膜片電阻和可見光平均穿透率的影響，在最佳條件下可得片電阻199 Ω/sq和穿透率92%的透明導電塗膜。放置在空氣中塗膜片電阻會慢慢升高，是因為空氣中水氣進入塗膜所造成。

Indium-tin hydroxide (ITH) nanostips were prepared by co-precipitation at room temperature and converted into indium-tin oxide (ITO) nanostrips after high-temperature calcination. The formed ITO powder was dispersed in 1-propanol and mixed with acrylic binder, surfactant, and initiator to get coating pastes. The coating pastes were coated on glass substrates by using a doctor-blade, and the resultant coatings were UV or thermal cured. The effects of the indium/tin ratio, calcination condition, coating paste composition, hydrolysis/condensation time, and coating method on sheet resistance and visible transmittance of the formed coatings were studied. In the extreme case, a coating with thickness of 1.5 μm sheet resistance of 199 Ω/sq and average visible transmittance of 92% could be prepared. The sheet resistance was increased in air environment because of entered moisture into the coating.

目錄
中文摘要 I
英文摘要 II
本文目錄 III
表目錄 IV
圖目錄 V
第一章 序論 1
第二章 文獻回顧 4
2-1銦錫氧化物製備 4
2-2銦錫氧化物塗膜 8 
第三章 實驗部分 15
3-1實驗藥品 15
3-2實驗步驟 19
3-3實驗設備及儀器 22
第四章 結果與討論 26
4-1銦錫氧化物奈米片條的製作 26
4-2塗液組成研究 32
4-3刮膜條件研究 36
4-4熱起始硬化製備銦錫氧化物複合塗膜 43
4-5複合塗膜片電阻變化 45
第五章 結論 48
參考文獻 50
附錄A 55

 
表目錄
表2-1不同條件製備的ITO奈米粒子導電率 5
表2-2製作塗膜溫度200度以下製備ITO導電塗膜文獻整理 12
表4-1不同銦/錫比例的配置克數 27
表4-2不同銦/錫莫爾比製作的ITO粉體顏色及其複合塗膜性質 27
表4-3不同煆燒氣體環境下及其複合塗膜性質 30
表4-4不同煆燒溫度製作的ITO塗膜性質 30
表4-5不同MSMA、TODA比例製備的ITO塗膜性質 33
表4-6不同光起始劑製作的ITO塗膜性質 34
表4-7固定比例不同溶劑的ITO複合薄膜光電性質 35
表4-8不同放置時間製備的ITO塗膜性質 36
表4-9不同固含量的ITO塗膜性質 38
表4-10不同曝光能量製備的ITO塗膜性質 39
表4-11不同曝光次數製備的ITO塗膜性質 39
表4-12不同刮刀間隙的ITO複合薄膜光電性質 40
表4-13不同基板的ITO複合導電膜光電性質 41
表4-14旋轉塗佈法製備的ITO薄膜性質 42
表4-15不同溶劑製備ITO的塗膜性質 43
表4-16不同BPO起始劑含量製備的ITO塗膜的性質 44
表4-17不同固含量製備ITO塗膜的性質 44
表4-18不同製備條件下，放置空氣中塗膜的片電阻變化(Ω/sq)46
表A-1經由XRD圖計算不同銦/錫比的晶粒大小 55
 
圖目錄
圖1-1ITO穿透吸收和反射光譜圖 1
圖2-1結構因NH3的影響往[100]方向生長 6
圖2-2不同PVP比例下合成ITO奈米粒子的示意圖 6
圖2-3聚異丁烯丁二酰亞胺調整ITH奈米粒子長成柱狀示意圖 6
圖2-4MSMA在ITO塗膜製作時的工作機制圖：(a)MSMA將ITO粒子減少距離；(b)MSMA和ITO水解縮合反應 13
圖3-1ITO粉體製備流程圖 21
圖3-2ITO複合塗膜製作流程圖 21
圖4-1不同銦/錫比製備的ITO塗膜UV-vis圖 28
圖4-2不同的煆燒溫度製作的ITO條片的TEM圖；(a) 500 度；(b) 600 度； (c) 700 度 31
圖4-3不同煆燒溫度ITO的XRD圖 31
圖4-4不同刮膜液組成製備ITO塗膜性質表：(a) TODA/MSMA=2 (b) TODA=0.04 g (c) TODA=0.05 g 33
圖4-5不同光起始劑含量製備ITO塗膜 UV-vis圖 34
圖4-6不同溶劑刮膜液製備ITO塗膜UV-vis圖 35
圖4-7鉛筆硬度測試(HB)光學顯微鏡觀測不同放置時間製備的塗膜：(a)放置0天；(b)放置3天 37
圖4-8水解反應3天 煆燒溫度600 度 MSMA/TODA/ITO比例為0.5/0.4/1所製作的塗膜SEM圖：(a)表面；(b)截面 37
圖4-9不同固含量製備ITO塗膜片電阻穿透率圖 38
圖4-10不同間隙刮刀製備ITO塗膜UV-vis圖 40
圖4-11旋轉塗佈法SEM截面圖：(a)旋轉中心部分；(b)周圍部分 42
圖4-12不同製備條件下，塗膜放置空氣中片電阻隨著不同時間改變上升圖 47
圖4-13PSS在氮氣環境下TGA圖 47
圖A-1不同銦/錫比例不同沉澱時間ITH的SEM圖：(a)沉澱3小時銦/錫比9/1.5，(b) 沉澱3天銦/錫比9/1.5，(c) 沉澱3小時銦/錫比9/1，(d) 沉澱3天銦/錫比9/1，(e) 沉澱3小時銦/錫比9/0.5，(f) 沉澱3天銦/錫比9/0.5 56
圖A-2不同銦/錫比沉澱3天ITH的XRD圖 57
圖A-3不同銦/錫比沉澱3天ITH的FT-IR圖 57

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