本研究以靜電力場輔助電鍍法製備具微米構形聚二氧乙基噻吩-鉑複合薄膜光電致色變元件之製作與性質分析，實驗分為兩部分。
Part 1：以靜電力場輔助電鍍法製備聚二氧乙基噻吩(PEDOT)和鉑複合薄膜，並且改變PEDOT不同析鍍電量參數(15 ~ 35 mC/cm2,mPEDOT Q15 ~ Q35)，對薄膜以光學顯微鏡、循環伏安法、計時安培法及紫外線可見光光譜分析其表面、電致色變和光學性質。由紫外線可見光光譜與電化學測試發現穿透率調幅(delta T)與著色效率(C.E.)以mPEDOT Q25效果最好。再以脈衝電沉積鉑製備出聚二氧乙基噻吩-鉑複合薄膜，藉由改變電鍍的先後順序，製備出mPEDOT、Pt-mPEDOT (先沉積PEDOT)和mPEDOT-Pt (先沉積鉑)薄膜，發現電致色變的應答時間為mPEDOT-Pt < mPEDOT< Pt-mPEDOT。
Part 2 : 以微米構形聚二氧乙基噻吩-鉑複合薄膜作為光電致色變元件(photoelectrochromic device, PECD)工作電極，對電極用15 wt% P25漿料以旋轉塗佈方式塗佈，再以450℃鍛燒。PECD閉環狀態經由紫外燈照光(365 nm, 5 mW/cm2)一分鐘著色，再以關燈閉環或開環去色觀察元件照光應答時間，以微米構形的聚二氧乙基噻吩-鉑複合薄膜的PECD去色應答時間優於聚二氧乙基噻吩的PECD，表示鉑助於電解質中氧化還原對I3-再生還原成I-過程，使去色應答時間縮短。

In this study, the fabrication and characterization of photoelectrochromic devices with micropattern poly(3,4-ethylenedioxythiophene)-platinum composite thin films prepared by electrostatic field-assisted electrodeposition were studied. The experiment was divided into two parts. Part 1 : Micropattern poly(3,4-ethylenedioxythiophene)-platinum composite thin films were prepared by electrostatic field-assisted electrodeposition. The different electrodeposition charge parameters (15 ~ 35 mC / cm2, mPEDOT Q15 ~ Q35) of the thin films were studied. The films were characterized by optical microscopy (OM), cyclic voltammetry (CV), chronoamperometry (CA) and ultraviolet/visible (UV/Vis) spectroscopy to analyze their surface structure, electrochromism and optical properties. UV/Vis spectrum and electrochemical tests showed that mPEDOT Q25 had the best effect on transmittance modulate (

目錄
中文摘要	I
英文摘要	II
目錄    	IV
圖目錄	VI
表目錄	X
第一章、緒論	1
1.1	簡介	1
1.2	光電致色變元件 (photoelectrochromic device, PECD)	3
1.3	靜電力場輔助微米構形 (Electrostatic Field-Assisted Electrodeposition)	6
1.4 文獻回顧	7
第二章、實驗	12
2.1實驗材料	12
2.2實驗儀器	13
2.3實驗架構	14
2.4實驗步驟	15
2.5 實驗分析	21
2.5.1表面性質分析	21
2.5.2電化學性質分析	21
2.5.3光學性質分析	22
2.5.4 電致色變性質分析	23
第三章、結果與討論	29
Part 1 鉑與微米構型PEDOT (mPEDOT)複合薄膜	29
3.1 mPEDOT及PEDOT表面性質分析	29
3.2 mPEDOT及PEDOT 電化學與光學性質分析	33
3.3 mPEDOT與PEDOT電致色變性質分析	39
3.4 mPEDOT及Pt-mPEDOT 電化學與表面性質分析	44
3.5 mPEDOT及Pt-mPEDOT 電致色變與光學性質分析	46
Part 2 光電致色變元件(photoelectrochromic device, PECD)	50
3.6 PECD光電致色變性質分析	50
第四章、結論	55
參考文獻	56
附錄	59
 
圖目錄
圖1-1 (a) NTERA電子標籤 (b) Gentex防眩光後視鏡 (c) 汽車天窗 (d) 波音787智慧窗戶	2
圖1-2 壓克力樹酯構型PE膜之光學顯微鏡圖(x10)	2
圖1-3 典型光電致色變元件結構示意圖	3
圖1-4 PEDOT鏈聚合反應過程	4
圖1-5 PEDOT高分子摻雜示意圖	5
圖1-6 polaron和bipolaron能帶圖	5
圖1-7各種物質之接觸代電系列	6
圖1-8 (a)分離式PECD結構 (b)合併式PECD結構示意圖	7
圖2-1 EDOT單體結構	12
圖2-2 貼絕緣膠帶及銅膠的ITO玻璃工作電極	15
圖2-3 ITO glass接觸起電程序圖	16
圖2-4 PEDOT及mPEDOT電鍍流程圖	17
圖2-5 鉑與PEDOT複合薄膜示意圖	18
圖2-6 定電位脈衝電鍍示意圖	18
圖2-7 電鍍Pt流程圖	19
圖2-8 N3 dye/TiO2薄膜製備流程圖	20
圖2-9 元件封裝流程圖	20
圖2-10 同步電化學和微型光譜儀實驗裝置(a)微型光譜儀和裝置載台(b)裝置載台內三電極系統PEDOT薄膜去色態(0.3 V) (c) PEDOT薄膜著色態(-1.1 V) (d) CHI 611定電流定電位分析儀 (e) 照射紫外燈和微型光譜儀實驗裝置	22
圖2-11 PEDOT Q25 (沉積電量25 mC/cm2)施加0.3 ~ -1.3V定電位20 s下之UV/Vis光譜圖	23
圖2-12 光譜應答時間示意圖	24
圖2-13 著色和去色電量示意圖	25
圖2-14 PEDOT著色電量與光學密度差圖(斜率為著色效率)	26
圖2-15 染敏太陽能電池照光下電流電壓圖	28
圖3-1 mPEDOT電沉積電量(15~35mC/cm2)光學顯微鏡圖(50、100、200倍率)	289
圖3-2 微米構形孔洞減少百分比圖	30
圖3-3 PEDOT Q15~35薄膜表面輪廓圖，scan rate為10 μm/s，掃描模式調整為up/down，探針高低範圍1~5 μm	31
圖3-4 mPEDOT Q15~35薄膜表面輪廓圖，scan rate為10 μm/s，掃描模式調整為up/down，探針高低範圍1~5 μm	32
圖3-5 PEDOT與mPEDOT Q15之循環伏安圖，在0.1 M LiClO4, 1 mM HClO4的PC，掃描速率為0.1 V/s	34
圖3-6 PEDOT與mPEDOT Q20~35之循環伏安圖，在0.1 M LiClO4, 1 mM HClO4的PC，掃描速率為0.1 V/s	34
圖3-7 PEDOT Q20~35階梯電位圖，電位設定在0.3和 - 1.1 V，在0.1 M LiClO4, 1 mM HClO4的PC	35
圖3-8 mPEDOT Q20~35階梯電位圖，電位設定在0.3和- 1.1 V，在0.1 M LiClO4, 1 mM HClO4的PC	35
圖3-9 PEDOT Q25施加0.3 ~ -1.3V定電位20 s下之UV/Vis光譜圖，在0.1 M LiClO4, 1 mM HClO4的PC溶液	37
圖3-10 PEDOT與mPEDOT Q15、25和35之UV/Vis全波長光譜圖，施加-1.1 V(著色態)定電位20 s下，在0.1 M LiClO4, 1 mM HClO4的PC溶液	37
圖3-11 PEDOT與mPEDOT Q15~35薄膜在630 nm穿透度下著色(-1.1 V)與去色(0.3 V)穿透度，在0.1 M LiClO4, 1 mM HClO4的PC溶液	38
圖3-12 PEDOT與mPEDOT Q15~35薄膜在630 nm穿透度下穿透度調幅(

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