碳化矽（SiC）因其寬能隙，高崩潰電場，高導熱性，高化學穩定性和低固有載流子濃度而受到越來越多的關注，並有很大的潛力成為下一代半導體材料。這些優異的物理特性使SiC成為高功率電子元件的更佳選擇。但是，碳化矽極其堅硬脆弱，加工起來非常困難。表面光潔度差和深度滲透裂紋是加工引起的典型損傷。這項研究在通過機械化學研磨（MCG）加工SiC來提高材料移除率和表面光潔度。在本研究中設計，製造和測試了具有不同百分比鑽石和CeO2的樹脂結合劑砂輪以研磨單晶4H-SiC。在這項研究中，表面光潔度優於5奈米（Ra），平均材料移除率約為1648 μm3/ min。典型的磨削比約為7.78。

Silicon carbide (SiC) is attracting more and more attention and has great potential to become the next-generation semiconductor material for its wide bandgap, high electric breakdown field, high thermal conductivity, high chemical stability and low intrinsic carrier concentration. These superior physical properties make SiC a better choice for high-voltage power electronics application than silicon. However, SiC is extremely hard and brittle and is very difficult to machine. Poor surface finish and deep penetrated cracks are the typical damage induced by machining. This research aims to improve material removal efficiency and surface finish by machining SiC with mechanical chemical grinding (MCG). Resin bond grinding wheels with different percentage of diamond and CeO2 are designed, produced and tested in this study to grind single crystal 4H-SiC. Surface finish better than 5 nm (Ra) with an average material removal rate around 1648 μm3/min are achieved in this study. The typical grinding ratio is around 7.78.

目錄
致謝	I
中文摘要	III
英文摘要	IV
	目錄	V
圖目錄	VIII
表目錄	XII
第一章、緒論	1
1-1 前言	1
1.2 研究動機	3
1.3 研究目的	4
第二章、文獻回顧與理論基礎	5
2.1 單晶碳化矽料特性介紹	5
2.1.1 硬脆材料基板機械性質	9
2.2. 精密磨削加工	10
2.2.1 磨削加工機制	10
2.2.2 硬脆材料移除機制	12
2.2.3 磨削加工參數之探討	13
2.2.4 砂輪磨耗	14
2.2.5 砂輪修整與削銳	16
2.3砂輪組成	17
2.3.1結合劑種類	17
2.3.2磨料種類	19
2.4 化學機械磨削	21
2.4.1 單晶碳化矽磨削磨料探討	21
2.4.2 機械化學磨削	24
2.4.3 機械化學砂輪製作專利	29
第三章、實驗方法與設備	31
3.1 研究流程圖	31
3.2 研究設計	32
3.3 實驗設備	33
3.3.1 製作砂輪設備	33
3.3.2 輪磨設備	38
3.3.3 量測分析儀器	40
3.4 實驗步驟	45
3.4.1 棒狀砂輪製作	45
3.4.2 棒狀砂輪磨削試驗	48
第四章、結果與討論	51
4.1 CM 樹脂砂輪之研製	51
4.1.1 棒狀砂輪之製作	51
4.2  CM砂輪磨削試驗之結果	54
4.2.1不同樹脂結合劑CM砂輪磨削4H-SiC後磨削比之比較	55
4.2.2不同磨料配比磨削後對4H-SiC Ra之影響	58
4.2.3不同磨料配比磨削後對4H-SiC後磨削比之比較	60
4.2.4不同切深CM砂輪磨削後對4H-SiC Ra之影響	62
4.2.5 單次進刀移除深度之比較	65
4.2.6 單次進刀4H-SiC之Ra與砂輪磨削比之比較	71
第五章、結論	75
第六章、未來展望	77
參考文獻	80
 
 
圖目錄
圖2- 1 SiC單晶碳化矽晶體結構【4】	6
圖2- 2 SiC晶體型態堆疊模型( 2H, 4H, 6H) 【5】【6】	7
圖2- 3 4H-SiC和6H-SiC的晶體結構【7】	8
圖2- 4 4H-SiC的典型結晶面【7】	8
圖2- 5摩擦、犁切與切削三階段【14】	12
圖2- 6 砂輪三種磨耗型態(a)磨料磨耗(b)磨料破碎(c)結合劑破碎【18】	15
圖2- 7鑽石磨粒之磨耗【19】	16
圖2- 8顯示砂輪削銳過程【18】	16
圖3- 1 研究流程圖	31
圖3- 2氧化鈰磨料(2~5 μm)	33
圖3- 3FACT/YK-J鑽石粉(4~6μm)	34
圖3- 4碳酸鈉	34
圖3- 5酚醛樹脂(a)939P酚醛樹脂(b)787酚醛樹脂	35
圖3- 6棒狀砂輪模具	36
圖3- 7高溫加壓機	37
圖3- 8 NACHi ASP-MKE精密加工機【46】	38
圖3- 9 4H-N碳化矽試片	39
圖3- 10金相顯微鏡	40
圖3- 11 OLYPUS 4100共軛焦顯微鏡【45】	42
圖3- 12掃描式電子顯微鏡	44
圖3- 13 修整砂輪端面與外周示意圖	49
圖3- 14磨削加工示意圖	49
圖3- 15 加工工件示意圖	50
圖4- 1 棒狀砂輪燒結後之形貌	51
圖4- 2修整後之形貌(11.88 mm)	52
圖4- 3修整後砂輪表面形貌(a)砂輪外型(b)砂輪輪廓(c)磨料露出及孔洞(d)為(c)之放大圖	53
圖4- 4樹脂砂輪磨削後的磨削角(a)939P 35/35(b)787 CM35/35	56
圖4- 5估算砂輪磨耗量示意圖	56
圖4- 6不同磨料配比加工後之工件表面SEM之觀察，(a)CM35/35 (b)為(a)之放大圖(倍率x5.0k)，(c)CM40/30 (d)為(c)之放大圖(倍率x5.0k)	59
圖4- 7切深3 μm之工件表面實際量測數值(a)CM35/35 (b)CM40/30	59
圖4- 8不同砂輪加工後之磨削角(a)CM35/35(b)CM40/30	61
圖4- 9不同磨料配比磨削比之柱狀圖	61
圖4- 10不同切深磨削後工件表面之觀察(a)3 μm; (b)為(a)之放大圖; (c)5 μm; (d)為(c)之放大圖; (e)7 μm; (f)為(e)之放大圖	63
圖4- 11不同切深之工件表面實際量測值(a)3 μm; (b)5 μm; (c)7 μm	64
圖4- 12 787CM40/30單次進刀之表面形貌SEM	66
圖4- 13 CM40/30 787之三階加工之SEM圖(a)第一階 (b)為(a)之放大圖(c)第二階 (d)為(c)之放大圖 (e)第三階 (f)為(e)之放大圖	67
圖4- 14加工後4H-SiC表面之雷射共軛焦	68
圖4- 15第一至三階之移除深度之雷射共軛焦(a)第一階 (b)第二階 (c)第三階	69
圖4- 16每階移除深度之柱狀圖	70
圖4- 17每階層材料移除率之柱狀圖	70
圖4- 18工件之不同階層之表面粗糙度	73
圖4- 19各階層之實際深度	74
圖4- 20各階層加工後之表面粗糙度	74
圖4- 21各階層加工後之表面粗糙度與磨削比之趨勢圖	74
圖6- 1自製晶圓機用之砂輪	77
圖6- 2 4H-SiC-1晶圓加工前表面粗糙度Sa (a)晶圓內圈(b)晶圓中圈(c)晶圓外圈	78
圖6- 3 4H-SiC-2晶圓加工前表面粗糙度Sa (a)晶圓內圈(b)晶圓中圈(c)晶圓外圈	79
 
表目錄
表2- 1半導體材料之特性比較表【1】	6
表2- 2單晶矽與單晶碳化矽機械性質【2】	9
表3- 1鑽石粉規格表	34
表3- 2 939P與787酚醛樹脂成分表	35
表3- 3 M3853 高溫熱壓機規格表	36
表3- 4 NACHi ASP-MKE精密加工機規格表【39】	38
表3- 5 碳化矽-材料性質	39
表3- 6 OLYPUS 4100規格表【38】	42
表3- 7 砂輪成分表	47
表3- 8 棒狀砂輪加工參數	48
表4- 1磨削4H-SiC加工參數	54
表4- 2不同樹脂結合劑加工4H-SiC之加工參數	55
表4- 3砂輪磨削比計算表	57
表4- 4不同磨料配比加工4H-SiC之加工參數	58
表4- 5不同磨料配比對4H-SiC之加工參數	60
表4- 6不同磨料配比砂輪磨削比計算表	61
表4- 7不同切深加工4H-SiC之加工參數	62
表4- 8單次進刀磨削4H-SiC之加工參數	68
表4- 9每次進刀砂輪磨削比計算表	72

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