本實驗利用溶膠-凝膠法、旋轉塗佈法和棒塗法於FTO導電玻璃上製備(P,Si) -TiO2厚膜，並將其組裝成DSSC元件。所製備出的(P,Si)-TiO2厚膜經X-光繞射分析儀、掃描式電子顯微鏡、紫外光-可見光光譜儀、拉曼光譜儀等來了解其結晶相態、晶粒尺寸、膜層表面形態、膜層厚度、可見光穿透度、染料吸附量等。以(P,Si)-TiO2厚膜組裝成之DSSC元件以太陽光模擬器來測得其光電轉化效率。結果顯示隨著(P,Si)-TiO2厚膜厚度的增加其結晶形態維持純的銳鈦礦相態不變，晶粒尺寸也都固定在20 nm，表面結構皆由微米級的二次粒子堆疊而成且具有許多大小不一的裂縫與孔洞。可見光穿透度隨塗佈次數上升而降低，膜層厚度、染料吸附量以及光電轉化效率則是隨塗佈次數增加而上升。當(P,Si)-TiO2膜層厚度達到24m時，所組裝之DSSC元件的光電轉化效率為6.52%，其所對應的開路電壓為0.74V，而閉環電流為18.09 mA/cm2。

The (P,Si)-TiO2 thick films used for DSSCs were synthesized by the sol-gel method, spin coating and bar coating techniques. Effects of film thickness on phase contents, grain growth, surface morpholopy, visible light transmittance and dye loading were investigated using X-ray diffractmeter, scanning electron microscope, ultraviolet-visible light spectrometer and Raman spectrometer. The photoelectric conversion efficiency of the DSSCs was used the prepared (P/Si)-TiO2 thick films  as photoanode measured by a solar simulator. The results showed that increasing the thickness of (P,Si)-TiO2 thick film did not change the crystal structure(anatase structure) and crystillite sizes(20 m) of anatase TiO2 and the morphology of the film. The film were formed by stacking the secondary particles of TiO2 with different sizes. The voids existed in the film. Visible light transmittance decreased with the thickness of (P,Si)-TiO2 thick films. The film thickness, dye loading and photoelectric conversion efficiency were also increased with the thickness of (P,Si)-TiO2 thick films. When the (P,Si)-TiO2 thick films used for DSSCs at 24 m thickness, can give The photoelectric conversion efficiency for the DSSC used the (P,Si)-TiO2 photoanode of 24 m thickness was 6.52%, with Voc= 0.74V and Jsc= 18.09 mA / cm2.

目錄
中文摘要	I
英文摘要	II
目錄	IV
圖目錄	VII
表目錄	X
第一章 緒論	1
第二章 文獻回顧	4
2-1	工作電極	7
2-2	染料敏化劑	10
2-3	電解質	12
2-4	對電極	14
第三章 實驗步驟與特性分析	17
3-1	實驗藥品	17
3-2	實驗步驟	18
3-2-1 (P,Si)-TiO2粉體製備	18
3-2-2 (P,Si)-TiO2光陽極製備	19
3-2-3 電解質與對電極製備	20
3-2-4 DSSCs元件組合	21
3-3	分析儀器	23
3-3-1 X光繞射分析儀(X-ray diffractmeter, XRD)	25
3-3-2 紫外光-可見光光譜儀(UV-Visible spectrophotometer, UV-Vis)	26
3-3-3 掃描式電子顯微鏡(Scanning electron microscope, SEM)	27
3-3-4 太陽光模擬器(Solar Simulator)	28
3-3-5 熱重分析儀與熱示差同步熱分析儀(Simultaneous thermogravimetric and differential scanning calorimetric analyzer, TGA-DSC)	29
3-3-6 比表面積分析儀(Surface Area and Porosimetry Analyzer)	30
3-3-7 拉曼光譜儀(Raman Spectrometer)	34
3-3-8 傅立葉轉換紅外線光譜儀 (Fourier Transform IR Spectrum, FTIR)[57]	35
3-4	DSSCs光電轉換效率計算	36
第四章 結果與討論	38
4-1 (P,Si)-TiO2粉體的特性分析	38
4-2 TiO2光陽極的特性分析	42
4-2-1 FTO導電玻璃分析	42
4-2-2 TiO2光陽極基底層分析	43
4-3 (P,Si)-TiO2光陽極的特性分析	48
4-4 P25元件的特性分析	60
4-4-1 P25粉體的特性分析	60
4-4-2 P25光陽極的特性分析	62
4-4-3 P25元件的光電轉化效率分析	66
第五章 結論	68
參考文獻	70


 
圖目錄
圖2-1染料敏化太陽能電池之示意圖	4
圖2-2染料分子結構圖	12
圖3-1凝膠衍生(P,Si)-TiO2奈米粉體製備流程圖	18
圖3-2 (P,Si)-TiO2漿料製備流程圖	20
圖3-3(P,Si)-TiO2光陽極製備流程圖	20
圖3-4 DSSCs元件組合示意圖	22
圖3-5 X光對晶格之繞射	25
圖3-6  SEM構造示意圖	28
圖3-7太陽光模擬器原理架構示意圖	29
圖3-8六種不同類型的吸附-脫附等溫曲線圖	34
圖3-9  DSSC之I-V曲線圖	37
圖4-1 (P,Si)-TiO2粉體的TGA-DSC圖	39
圖4-2 (P,Si)-TiO2粉體在不同溫度下煆燒3h小時後的XRD圖	40
圖4-3煆燒800oC的(P,Si)-TiO2粉體SEM圖	41
圖4-4 清潔處理後FTO導電玻璃經不同次數的煆燒(550oC，3h)後電阻之變化關係圖	42
圖4-5 FTO導電玻璃的SEM表面結構圖	44
圖4-6旋轉塗佈1層TiO2的SEM表面結構圖	44
圖4-7旋轉塗佈2層TiO2的SEM表面結構圖	45
圖4-8旋轉塗佈3層TiO2的SEM表面結構圖	45
圖4-9 FTO導電玻璃與旋轉塗佈1~3層TiO2的電阻變化圖	46
圖4-10 FTO導電玻璃與旋轉塗佈1~3層TiO2的紫外光-可見光光譜圖	47
圖4-11 TiO2-3L、TiO2-6L和TiO2-9L膜的XRD圖	49
圖4-12 (a)TiO2-3L(b)TiO2-6L(c)TiO2-6LP和(d)TiO2-9L膜的SEM圖	51
圖4-13 (a)TiO2-3L (b)TiO2-6L (c)TiO2-6LP和(d)TiO2-9LSEM截面圖	52
圖4-14 (P,Si)-TiO2厚膜的紫外光-可見光光譜圖	54
圖4-15 (P,Si)-TiO2厚膜的染料吸附量圖	54
圖4-16 不同濃度N719染料的吸附強度檢量線	55
圖4-17 不同厚度TiO2膜層的拉曼光譜圖	56
圖4-18 不同狀態TiO2膜層浸泡N719染料後的Raman圖譜	57
圖4-19 不同狀態膜層組成之DSSC元件的I-V曲線圖	58
圖4-20 P25粉體的XRD圖	61
圖4-21 P25-1L、P25-3L、P25-6L和P25-9L膜的XRD圖	63
圖4-22 P25厚膜的紫外光-可見光光譜圖	64
圖4-23 P25-9L的染料吸附量圖	65
圖4-24 不同狀態膜層組成之DSSC元件的I-V曲線圖	66
 
表目錄
表2-1 二氧化鈦結晶相態與物理性質	8
表2-2染料敏化太陽能電池對電極材料比較	16
表3-1實驗使用藥品清單	17
表4-1 FTO導電玻璃與旋轉塗佈1~3層TiO2的透光度關係	47
表4-2銳鈦礦TiO2拉曼振動波數與模式	56
表4-3 N719染料官能基之拉曼光譜振動波數	57
表4-4 DSSC元件之各項數值	59
表4-5 DSSC元件之各項數值	67

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